METHODS FOR WAFER BONDING, AND FOR NUCLEATING BONDING NANOPHASES
Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bondi...
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creator | HART, MURDOCK, ALLEN CULBERTSON, ROBERT, J BRADLEY, JAMES SELL, DAVID, ALEXANDER WHALEY, SHAWN, DAVID HERBOTS, NICOLE |
description | Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.
Selon l'invention, des substrats peuvent être liés selon un procédé comprenant la mise en contact d'une première surface de liaison d'un premier substrat avec une seconde surface de liaison d'un second substrat pour former un ensemble ; et la compression de l'ensemble en présence d'une atmosphère oxydante sous des conditions appropriées pour former une couche de liaison entre les première et seconde surfaces, la première surface de liaison comprenant une couche de surface polarisée ; la seconde surface de liaison comprenant une couche de surface hydrophile ; les première et seconde surfaces de liaison étant différentes. |
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Selon l'invention, des substrats peuvent être liés selon un procédé comprenant la mise en contact d'une première surface de liaison d'un premier substrat avec une seconde surface de liaison d'un second substrat pour former un ensemble ; et la compression de l'ensemble en présence d'une atmosphère oxydante sous des conditions appropriées pour former une couche de liaison entre les première et seconde surfaces, la première surface de liaison comprenant une couche de surface polarisée ; la seconde surface de liaison comprenant une couche de surface hydrophile ; les première et seconde surfaces de liaison étant différentes.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110113&DB=EPODOC&CC=WO&NR=2010127320A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110113&DB=EPODOC&CC=WO&NR=2010127320A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HART, MURDOCK, ALLEN</creatorcontrib><creatorcontrib>CULBERTSON, ROBERT, J</creatorcontrib><creatorcontrib>BRADLEY, JAMES</creatorcontrib><creatorcontrib>SELL, DAVID, ALEXANDER</creatorcontrib><creatorcontrib>WHALEY, SHAWN, DAVID</creatorcontrib><creatorcontrib>HERBOTS, NICOLE</creatorcontrib><title>METHODS FOR WAFER BONDING, AND FOR NUCLEATING BONDING NANOPHASES</title><description>Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.
Selon l'invention, des substrats peuvent être liés selon un procédé comprenant la mise en contact d'une première surface de liaison d'un premier substrat avec une seconde surface de liaison d'un second substrat pour former un ensemble ; et la compression de l'ensemble en présence d'une atmosphère oxydante sous des conditions appropriées pour former une couche de liaison entre les première et seconde surfaces, la première surface de liaison comprenant une couche de surface polarisée ; la seconde surface de liaison comprenant une couche de surface hydrophile ; les première et seconde surfaces de liaison étant différentes.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDwdQ3x8HcJVnDzD1IId3RzDVJw8vdz8fRz11Fw9HMBC_uFOvu4OoYAxWByCn6Ofv4BHo7BrsE8DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-3N_IwNDA0Mjc2MjA0diYOFUAKxQrMQ</recordid><startdate>20110113</startdate><enddate>20110113</enddate><creator>HART, MURDOCK, ALLEN</creator><creator>CULBERTSON, ROBERT, J</creator><creator>BRADLEY, JAMES</creator><creator>SELL, DAVID, ALEXANDER</creator><creator>WHALEY, SHAWN, DAVID</creator><creator>HERBOTS, NICOLE</creator><scope>EVB</scope></search><sort><creationdate>20110113</creationdate><title>METHODS FOR WAFER BONDING, AND FOR NUCLEATING BONDING NANOPHASES</title><author>HART, MURDOCK, ALLEN ; CULBERTSON, ROBERT, J ; BRADLEY, JAMES ; SELL, DAVID, ALEXANDER ; WHALEY, SHAWN, DAVID ; HERBOTS, NICOLE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010127320A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HART, MURDOCK, ALLEN</creatorcontrib><creatorcontrib>CULBERTSON, ROBERT, J</creatorcontrib><creatorcontrib>BRADLEY, JAMES</creatorcontrib><creatorcontrib>SELL, DAVID, ALEXANDER</creatorcontrib><creatorcontrib>WHALEY, SHAWN, DAVID</creatorcontrib><creatorcontrib>HERBOTS, NICOLE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HART, MURDOCK, ALLEN</au><au>CULBERTSON, ROBERT, J</au><au>BRADLEY, JAMES</au><au>SELL, DAVID, ALEXANDER</au><au>WHALEY, SHAWN, DAVID</au><au>HERBOTS, NICOLE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS FOR WAFER BONDING, AND FOR NUCLEATING BONDING NANOPHASES</title><date>2011-01-13</date><risdate>2011</risdate><abstract>Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.
Selon l'invention, des substrats peuvent être liés selon un procédé comprenant la mise en contact d'une première surface de liaison d'un premier substrat avec une seconde surface de liaison d'un second substrat pour former un ensemble ; et la compression de l'ensemble en présence d'une atmosphère oxydante sous des conditions appropriées pour former une couche de liaison entre les première et seconde surfaces, la première surface de liaison comprenant une couche de surface polarisée ; la seconde surface de liaison comprenant une couche de surface hydrophile ; les première et seconde surfaces de liaison étant différentes.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | METHODS FOR WAFER BONDING, AND FOR NUCLEATING BONDING NANOPHASES |
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