METHODS AND DEVICES FOR AN ELECTRICALLY NON-RESISTIVE LAYER FORMED FROM AN ELECTRICALLY INSULATING MATERIAL
A method is described that provides a current carrying substrate and individually controlling film characteristics for a material being simultaneously formed on both sides of the substrate so as to provide a first layer of the material on one side substantially thicker than a second layer on another...
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| creator | ADRIANI, PAUL OETTING, WOLF |
| description | A method is described that provides a current carrying substrate and individually controlling film characteristics for a material being simultaneously formed on both sides of the substrate so as to provide a first layer of the material on one side substantially thicker than a second layer on another side of the substrate. The thinned layer is formed from an electrically insulating material but is configured such that the layer provides no significant electrical resistance to current passing through the layer.
La présente invention concerne un procédé permettant d'obtenir un substrat porteur de courant et de contrôler individuellement les caractéristiques du film d'un matériau formé simultanément sur les deux faces du substrat afin d'obtenir une première couche de matériau sur une face sensiblement plus épaisse qu'une seconde couche sur une autre face du substrat. La couche épaissie est formée à partir d'un matériau isolant électriquement mais est conçue de telle sorte que cette couche ne présente pas une importante résistance électrique au courant la traversant. |
| format | Patent |
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La présente invention concerne un procédé permettant d'obtenir un substrat porteur de courant et de contrôler individuellement les caractéristiques du film d'un matériau formé simultanément sur les deux faces du substrat afin d'obtenir une première couche de matériau sur une face sensiblement plus épaisse qu'une seconde couche sur une autre face du substrat. La couche épaissie est formée à partir d'un matériau isolant électriquement mais est conçue de telle sorte que cette couche ne présente pas une importante résistance électrique au courant la traversant.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101028&DB=EPODOC&CC=WO&NR=2010124301A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101028&DB=EPODOC&CC=WO&NR=2010124301A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ADRIANI, PAUL</creatorcontrib><creatorcontrib>OETTING, WOLF</creatorcontrib><title>METHODS AND DEVICES FOR AN ELECTRICALLY NON-RESISTIVE LAYER FORMED FROM AN ELECTRICALLY INSULATING MATERIAL</title><description>A method is described that provides a current carrying substrate and individually controlling film characteristics for a material being simultaneously formed on both sides of the substrate so as to provide a first layer of the material on one side substantially thicker than a second layer on another side of the substrate. The thinned layer is formed from an electrically insulating material but is configured such that the layer provides no significant electrical resistance to current passing through the layer.
La présente invention concerne un procédé permettant d'obtenir un substrat porteur de courant et de contrôler individuellement les caractéristiques du film d'un matériau formé simultanément sur les deux faces du substrat afin d'obtenir une première couche de matériau sur une face sensiblement plus épaisse qu'une seconde couche sur une autre face du substrat. La couche épaissie est formée à partir d'un matériau isolant électriquement mais est conçue de telle sorte que cette couche ne présente pas une importante résistance électrique au courant la traversant.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrsKwjAUgOEsDqK-wwHnQi--wCE5sQdygSS2dCpF4qJoob4_Kri5OP388K3F1VJqvYqAToGijiVF0D68H8iQTIElGjOA864IFDkm7ggMDhQ-zpICHbz98eziyWBidwSLiQKj2YrVZbotefftRuw1JdkWeX6MeZmnc77n59j7uqzKqj40ZYV18596AYvtNzo</recordid><startdate>20101028</startdate><enddate>20101028</enddate><creator>ADRIANI, PAUL</creator><creator>OETTING, WOLF</creator><scope>EVB</scope></search><sort><creationdate>20101028</creationdate><title>METHODS AND DEVICES FOR AN ELECTRICALLY NON-RESISTIVE LAYER FORMED FROM AN ELECTRICALLY INSULATING MATERIAL</title><author>ADRIANI, PAUL ; OETTING, WOLF</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010124301A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ADRIANI, PAUL</creatorcontrib><creatorcontrib>OETTING, WOLF</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ADRIANI, PAUL</au><au>OETTING, WOLF</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS AND DEVICES FOR AN ELECTRICALLY NON-RESISTIVE LAYER FORMED FROM AN ELECTRICALLY INSULATING MATERIAL</title><date>2010-10-28</date><risdate>2010</risdate><abstract>A method is described that provides a current carrying substrate and individually controlling film characteristics for a material being simultaneously formed on both sides of the substrate so as to provide a first layer of the material on one side substantially thicker than a second layer on another side of the substrate. The thinned layer is formed from an electrically insulating material but is configured such that the layer provides no significant electrical resistance to current passing through the layer.
La présente invention concerne un procédé permettant d'obtenir un substrat porteur de courant et de contrôler individuellement les caractéristiques du film d'un matériau formé simultanément sur les deux faces du substrat afin d'obtenir une première couche de matériau sur une face sensiblement plus épaisse qu'une seconde couche sur une autre face du substrat. La couche épaissie est formée à partir d'un matériau isolant électriquement mais est conçue de telle sorte que cette couche ne présente pas une importante résistance électrique au courant la traversant.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHODS AND DEVICES FOR AN ELECTRICALLY NON-RESISTIVE LAYER FORMED FROM AN ELECTRICALLY INSULATING MATERIAL |
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