REACTION CHAMBER OF AN EPITAXIAL REACTOR AND REACTOR THAT USES SAID CHAMBER
The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1 ) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1 D); the cavity (2) comprises a reaction and deposition zone (3...
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| creator | PRETI, MARIO PRETI, FRANCO YARLAGADDA, SRINIVAS SPECIALE, NATALE |
| description | The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1 ) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1 D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1 B, 1 C, 1 D) in such a manner as to form a counterwall and to be a wall of said zone (3).
La présente invention porte sur une chambre de réaction d'un réacteur épitaxial qui est essentiellement constitué d'un élément en quartz ; l'élément en quartz comprend une partie d'élément en quartz (1) ayant une cavité interne (2) délimitée par des parois (1A, 1B, 1C, 1D) ; la cavité (2) comprend une zone de réaction et de dépôt (3) du réacteur épitaxial ; la zone (3) est conçue pour contenir un suscepteur (4) devant être chauffé dans celle-ci ; la chambre de réaction comprend également un composant en quartz (5) disposé à proximité desdites parois (1A, 1B, 1C, 1D) de façon à former une contre-paroi et à être une paroi de ladite zone (3). |
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La présente invention porte sur une chambre de réaction d'un réacteur épitaxial qui est essentiellement constitué d'un élément en quartz ; l'élément en quartz comprend une partie d'élément en quartz (1) ayant une cavité interne (2) délimitée par des parois (1A, 1B, 1C, 1D) ; la cavité (2) comprend une zone de réaction et de dépôt (3) du réacteur épitaxial ; la zone (3) est conçue pour contenir un suscepteur (4) devant être chauffé dans celle-ci ; la chambre de réaction comprend également un composant en quartz (5) disposé à proximité desdites parois (1A, 1B, 1C, 1D) de façon à former une contre-paroi et à être une paroi de ladite zone (3).</description><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101021&DB=EPODOC&CC=WO&NR=2010119430A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101021&DB=EPODOC&CC=WO&NR=2010119430A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PRETI, MARIO</creatorcontrib><creatorcontrib>PRETI, FRANCO</creatorcontrib><creatorcontrib>YARLAGADDA, SRINIVAS</creatorcontrib><creatorcontrib>SPECIALE, NATALE</creatorcontrib><title>REACTION CHAMBER OF AN EPITAXIAL REACTOR AND REACTOR THAT USES SAID CHAMBER</title><description>The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1 ) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1 D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1 B, 1 C, 1 D) in such a manner as to form a counterwall and to be a wall of said zone (3).
La présente invention porte sur une chambre de réaction d'un réacteur épitaxial qui est essentiellement constitué d'un élément en quartz ; l'élément en quartz comprend une partie d'élément en quartz (1) ayant une cavité interne (2) délimitée par des parois (1A, 1B, 1C, 1D) ; la cavité (2) comprend une zone de réaction et de dépôt (3) du réacteur épitaxial ; la zone (3) est conçue pour contenir un suscepteur (4) devant être chauffé dans celle-ci ; la chambre de réaction comprend également un composant en quartz (5) disposé à proximité desdites parois (1A, 1B, 1C, 1D) de façon à former une contre-paroi et à être une paroi de ladite zone (3).</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAOcnV0DvH091Nw9nD0dXINUvB3U3D0U3AN8AxxjPB09FEAK_APAgq6wNkhHo4hCqHBrsEKwY6eLjCtPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPtzfyMDQwNDQ0sTYwNHQmDhVAPd5Le8</recordid><startdate>20101021</startdate><enddate>20101021</enddate><creator>PRETI, MARIO</creator><creator>PRETI, FRANCO</creator><creator>YARLAGADDA, SRINIVAS</creator><creator>SPECIALE, NATALE</creator><scope>EVB</scope></search><sort><creationdate>20101021</creationdate><title>REACTION CHAMBER OF AN EPITAXIAL REACTOR AND REACTOR THAT USES SAID CHAMBER</title><author>PRETI, MARIO ; PRETI, FRANCO ; YARLAGADDA, SRINIVAS ; SPECIALE, NATALE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010119430A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>PRETI, MARIO</creatorcontrib><creatorcontrib>PRETI, FRANCO</creatorcontrib><creatorcontrib>YARLAGADDA, SRINIVAS</creatorcontrib><creatorcontrib>SPECIALE, NATALE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PRETI, MARIO</au><au>PRETI, FRANCO</au><au>YARLAGADDA, SRINIVAS</au><au>SPECIALE, NATALE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REACTION CHAMBER OF AN EPITAXIAL REACTOR AND REACTOR THAT USES SAID CHAMBER</title><date>2010-10-21</date><risdate>2010</risdate><abstract>The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1 ) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1 D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1 B, 1 C, 1 D) in such a manner as to form a counterwall and to be a wall of said zone (3).
La présente invention porte sur une chambre de réaction d'un réacteur épitaxial qui est essentiellement constitué d'un élément en quartz ; l'élément en quartz comprend une partie d'élément en quartz (1) ayant une cavité interne (2) délimitée par des parois (1A, 1B, 1C, 1D) ; la cavité (2) comprend une zone de réaction et de dépôt (3) du réacteur épitaxial ; la zone (3) est conçue pour contenir un suscepteur (4) devant être chauffé dans celle-ci ; la chambre de réaction comprend également un composant en quartz (5) disposé à proximité desdites parois (1A, 1B, 1C, 1D) de façon à former une contre-paroi et à être une paroi de ladite zone (3).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | REACTION CHAMBER OF AN EPITAXIAL REACTOR AND REACTOR THAT USES SAID CHAMBER |
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