NON-CONDENSING THERMOS CHUCK
The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos lay...
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| creator | LAFONTAINE, MARVIN LEE, WILLIAM, DAVIS PUROHIT, ASHWIN |
| description | The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
La présente invention concerne un appareil et un procédé de formation d'une couche isotherme entourant un support de tranche lors d'une implantation ionique. La couche isotherme est située en dessous d'une surface de blocage et comprend un espace vide et une enveloppe externe encapsulant l'espace vide. La couche isotherme empêche les transferts thermiques entre le support refroidi et l'environnement plus chaud dans une chambre de procédé et permet donc d'éviter la formation de condensation sur l'extérieur du support. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2010085350A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2010085350A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2010085350A13</originalsourceid><addsrcrecordid>eNrjZJDx8_fTdfb3c3H1C_b0c1cI8XAN8vUPVnD2CHX25mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgaGBgYWpsamBo6GxsSpAgD4diGz</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NON-CONDENSING THERMOS CHUCK</title><source>esp@cenet</source><creator>LAFONTAINE, MARVIN ; LEE, WILLIAM, DAVIS ; PUROHIT, ASHWIN</creator><creatorcontrib>LAFONTAINE, MARVIN ; LEE, WILLIAM, DAVIS ; PUROHIT, ASHWIN</creatorcontrib><description>The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
La présente invention concerne un appareil et un procédé de formation d'une couche isotherme entourant un support de tranche lors d'une implantation ionique. La couche isotherme est située en dessous d'une surface de blocage et comprend un espace vide et une enveloppe externe encapsulant l'espace vide. La couche isotherme empêche les transferts thermiques entre le support refroidi et l'environnement plus chaud dans une chambre de procédé et permet donc d'éviter la formation de condensation sur l'extérieur du support.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100729&DB=EPODOC&CC=WO&NR=2010085350A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100729&DB=EPODOC&CC=WO&NR=2010085350A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAFONTAINE, MARVIN</creatorcontrib><creatorcontrib>LEE, WILLIAM, DAVIS</creatorcontrib><creatorcontrib>PUROHIT, ASHWIN</creatorcontrib><title>NON-CONDENSING THERMOS CHUCK</title><description>The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
La présente invention concerne un appareil et un procédé de formation d'une couche isotherme entourant un support de tranche lors d'une implantation ionique. La couche isotherme est située en dessous d'une surface de blocage et comprend un espace vide et une enveloppe externe encapsulant l'espace vide. La couche isotherme empêche les transferts thermiques entre le support refroidi et l'environnement plus chaud dans une chambre de procédé et permet donc d'éviter la formation de condensation sur l'extérieur du support.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDx8_fTdfb3c3H1C_b0c1cI8XAN8vUPVnD2CHX25mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgaGBgYWpsamBo6GxsSpAgD4diGz</recordid><startdate>20100729</startdate><enddate>20100729</enddate><creator>LAFONTAINE, MARVIN</creator><creator>LEE, WILLIAM, DAVIS</creator><creator>PUROHIT, ASHWIN</creator><scope>EVB</scope></search><sort><creationdate>20100729</creationdate><title>NON-CONDENSING THERMOS CHUCK</title><author>LAFONTAINE, MARVIN ; LEE, WILLIAM, DAVIS ; PUROHIT, ASHWIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010085350A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LAFONTAINE, MARVIN</creatorcontrib><creatorcontrib>LEE, WILLIAM, DAVIS</creatorcontrib><creatorcontrib>PUROHIT, ASHWIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAFONTAINE, MARVIN</au><au>LEE, WILLIAM, DAVIS</au><au>PUROHIT, ASHWIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NON-CONDENSING THERMOS CHUCK</title><date>2010-07-29</date><risdate>2010</risdate><abstract>The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
La présente invention concerne un appareil et un procédé de formation d'une couche isotherme entourant un support de tranche lors d'une implantation ionique. La couche isotherme est située en dessous d'une surface de blocage et comprend un espace vide et une enveloppe externe encapsulant l'espace vide. La couche isotherme empêche les transferts thermiques entre le support refroidi et l'environnement plus chaud dans une chambre de procédé et permet donc d'éviter la formation de condensation sur l'extérieur du support.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | NON-CONDENSING THERMOS CHUCK |
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