DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS

A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of water and alcohol. The reactive gas...

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Hauptverfasser: RANA, VIRENDRA, V S, STEWART, MICHAEL, P
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STEWART, MICHAEL, P
description A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of water and alcohol. The reactive gas may further comprise a carrier gas. The reactive gas etches the solar cell substrate surface, removing oxygen and other impurities. When exposed to the neutral radicals, the substrate grows a thin film containing ammonium hexafluorosilicate, which is subsequently removed by heat treatment. L'invention porte sur un procédé et un appareil de nettoyage de couches de substrats de cellules solaires. Le substrat est exposé à un gaz réactif qui peut renfermer des radicaux neutres renfermant de l'azote et du fluor, ou qui peut renfermer de l'HF anhydre et de l'eau, un alcool, ou un mélange d'eau et d'alcool. Le gaz réactif peut en outre renfermer un gaz support. Le gaz réactif attaque chimiquement la surface de substrat de la cellule solaire, éliminant l'oxygène et les autres impuretés. Lors de l'exposition aux radicaux neutres, le substrat développe un film mince contenant de l'hexafluorosilicate d'ammonium, lequel est par la suite retiré par traitement thermique.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2010078160A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2010078160A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2010078160A23</originalsourceid><addsrcrecordid>eNrjZLB2CYpUcPZxdfTz9HNX8HdTCPb08XT291MIDg1yc3R2VXDzD1II9vdxDFJwdvXxUXAMCADKO4Z4-vsF8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-HB_IwNDAwNzC0MzA0cjY-JUAQBiHyn0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS</title><source>esp@cenet</source><creator>RANA, VIRENDRA, V S ; STEWART, MICHAEL, P</creator><creatorcontrib>RANA, VIRENDRA, V S ; STEWART, MICHAEL, P</creatorcontrib><description>A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of water and alcohol. The reactive gas may further comprise a carrier gas. The reactive gas etches the solar cell substrate surface, removing oxygen and other impurities. When exposed to the neutral radicals, the substrate grows a thin film containing ammonium hexafluorosilicate, which is subsequently removed by heat treatment. L'invention porte sur un procédé et un appareil de nettoyage de couches de substrats de cellules solaires. Le substrat est exposé à un gaz réactif qui peut renfermer des radicaux neutres renfermant de l'azote et du fluor, ou qui peut renfermer de l'HF anhydre et de l'eau, un alcool, ou un mélange d'eau et d'alcool. Le gaz réactif peut en outre renfermer un gaz support. Le gaz réactif attaque chimiquement la surface de substrat de la cellule solaire, éliminant l'oxygène et les autres impuretés. Lors de l'exposition aux radicaux neutres, le substrat développe un film mince contenant de l'hexafluorosilicate d'ammonium, lequel est par la suite retiré par traitement thermique.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100708&amp;DB=EPODOC&amp;CC=WO&amp;NR=2010078160A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100708&amp;DB=EPODOC&amp;CC=WO&amp;NR=2010078160A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RANA, VIRENDRA, V S</creatorcontrib><creatorcontrib>STEWART, MICHAEL, P</creatorcontrib><title>DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS</title><description>A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of water and alcohol. The reactive gas may further comprise a carrier gas. The reactive gas etches the solar cell substrate surface, removing oxygen and other impurities. When exposed to the neutral radicals, the substrate grows a thin film containing ammonium hexafluorosilicate, which is subsequently removed by heat treatment. L'invention porte sur un procédé et un appareil de nettoyage de couches de substrats de cellules solaires. Le substrat est exposé à un gaz réactif qui peut renfermer des radicaux neutres renfermant de l'azote et du fluor, ou qui peut renfermer de l'HF anhydre et de l'eau, un alcool, ou un mélange d'eau et d'alcool. Le gaz réactif peut en outre renfermer un gaz support. Le gaz réactif attaque chimiquement la surface de substrat de la cellule solaire, éliminant l'oxygène et les autres impuretés. Lors de l'exposition aux radicaux neutres, le substrat développe un film mince contenant de l'hexafluorosilicate d'ammonium, lequel est par la suite retiré par traitement thermique.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2CYpUcPZxdfTz9HNX8HdTCPb08XT291MIDg1yc3R2VXDzD1II9vdxDFJwdvXxUXAMCADKO4Z4-vsF8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-HB_IwNDAwNzC0MzA0cjY-JUAQBiHyn0</recordid><startdate>20100708</startdate><enddate>20100708</enddate><creator>RANA, VIRENDRA, V S</creator><creator>STEWART, MICHAEL, P</creator><scope>EVB</scope></search><sort><creationdate>20100708</creationdate><title>DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS</title><author>RANA, VIRENDRA, V S ; STEWART, MICHAEL, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010078160A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RANA, VIRENDRA, V S</creatorcontrib><creatorcontrib>STEWART, MICHAEL, P</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RANA, VIRENDRA, V S</au><au>STEWART, MICHAEL, P</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS</title><date>2010-07-08</date><risdate>2010</risdate><abstract>A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of water and alcohol. The reactive gas may further comprise a carrier gas. The reactive gas etches the solar cell substrate surface, removing oxygen and other impurities. When exposed to the neutral radicals, the substrate grows a thin film containing ammonium hexafluorosilicate, which is subsequently removed by heat treatment. L'invention porte sur un procédé et un appareil de nettoyage de couches de substrats de cellules solaires. Le substrat est exposé à un gaz réactif qui peut renfermer des radicaux neutres renfermant de l'azote et du fluor, ou qui peut renfermer de l'HF anhydre et de l'eau, un alcool, ou un mélange d'eau et d'alcool. Le gaz réactif peut en outre renfermer un gaz support. Le gaz réactif attaque chimiquement la surface de substrat de la cellule solaire, éliminant l'oxygène et les autres impuretés. Lors de l'exposition aux radicaux neutres, le substrat développe un film mince contenant de l'hexafluorosilicate d'ammonium, lequel est par la suite retiré par traitement thermique.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DRY CLEANING OF SILICON SURFACE FOR SOLAR CELL APPLICATIONS
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