PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON
A nanocluster source constituted of: a cooled aggregation chamber; a magnetron arranged to sputter a target, the magnetron in communication with the cooled aggregation chamber such that sputtered atoms of the target are received within the cooled aggregation chamber; a vacuum source in communication...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | BASKIN, EMANUEL EPSTEIN, ALEXANDER GARBER, VALERY FAYER, ALEX |
| description | A nanocluster source constituted of: a cooled aggregation chamber; a magnetron arranged to sputter a target, the magnetron in communication with the cooled aggregation chamber such that sputtered atoms of the target are received within the cooled aggregation chamber; a vacuum source in communication with the cooled aggregation chamber; a source of at least one noble aggregation gas in communication with the cooled aggregation chamber; and a source of hydrogen gas in communication with the cooled aggregation chamber. Advantageously, the hydrogen gas prevents oxidation of the target and silicon film covering a cooled inner surface of the aggregation chamber, and reduces the surface tension of the formed nanoclusters.
L'invention concerne une source de nanoagrégats, constituée: d'une chambre d'agrégation refroidie; d'un magnétron agencé pour pulvériser une cible, le magnétron étant en communication avec la chambre d'agrégation refroidie de telle sorte que des atomes pulvérisés de la cible soient reçus à l'intérieur de la chambre d'agrégation refroidie; d'une source de vide en communication avec la chambre d'agrégation refroidie; d'une source d'au moins un gaz d'agrégation noble en communication avec la chambre d'agrégation refroidie; et d'une source d'hydrogène gazeux en communication avec la chambre d'agrégation refroidie. De façon avantageuse, l'hydrogène gazeux empêche l'oxydation de la cible et du film de silicium qui recouvre une surface intérieure refroidie de la chambre d'agrégation, et réduit la tension de surface des nanoagrégats formés. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2010055505A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2010055505A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2010055505A13</originalsourceid><addsrcrecordid>eNrjZNAPCPJ3CXUO8fT3U_B3U3D09Q8K8PAPDVZw9HNRcA6KDA5x9PHx9HNVCPb08XT29-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGhgYGpqamBqaOhsbEqQIAvDYnHA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON</title><source>esp@cenet</source><creator>BASKIN, EMANUEL ; EPSTEIN, ALEXANDER ; GARBER, VALERY ; FAYER, ALEX</creator><creatorcontrib>BASKIN, EMANUEL ; EPSTEIN, ALEXANDER ; GARBER, VALERY ; FAYER, ALEX</creatorcontrib><description>A nanocluster source constituted of: a cooled aggregation chamber; a magnetron arranged to sputter a target, the magnetron in communication with the cooled aggregation chamber such that sputtered atoms of the target are received within the cooled aggregation chamber; a vacuum source in communication with the cooled aggregation chamber; a source of at least one noble aggregation gas in communication with the cooled aggregation chamber; and a source of hydrogen gas in communication with the cooled aggregation chamber. Advantageously, the hydrogen gas prevents oxidation of the target and silicon film covering a cooled inner surface of the aggregation chamber, and reduces the surface tension of the formed nanoclusters.
L'invention concerne une source de nanoagrégats, constituée: d'une chambre d'agrégation refroidie; d'un magnétron agencé pour pulvériser une cible, le magnétron étant en communication avec la chambre d'agrégation refroidie de telle sorte que des atomes pulvérisés de la cible soient reçus à l'intérieur de la chambre d'agrégation refroidie; d'une source de vide en communication avec la chambre d'agrégation refroidie; d'une source d'au moins un gaz d'agrégation noble en communication avec la chambre d'agrégation refroidie; et d'une source d'hydrogène gazeux en communication avec la chambre d'agrégation refroidie. De façon avantageuse, l'hydrogène gazeux empêche l'oxydation de la cible et du film de silicium qui recouvre une surface intérieure refroidie de la chambre d'agrégation, et réduit la tension de surface des nanoagrégats formés.</description><language>eng ; fre</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MANUFACTURE OR TREATMENT THEREOF ; METALLURGY ; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100520&DB=EPODOC&CC=WO&NR=2010055505A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100520&DB=EPODOC&CC=WO&NR=2010055505A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BASKIN, EMANUEL</creatorcontrib><creatorcontrib>EPSTEIN, ALEXANDER</creatorcontrib><creatorcontrib>GARBER, VALERY</creatorcontrib><creatorcontrib>FAYER, ALEX</creatorcontrib><title>PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON</title><description>A nanocluster source constituted of: a cooled aggregation chamber; a magnetron arranged to sputter a target, the magnetron in communication with the cooled aggregation chamber such that sputtered atoms of the target are received within the cooled aggregation chamber; a vacuum source in communication with the cooled aggregation chamber; a source of at least one noble aggregation gas in communication with the cooled aggregation chamber; and a source of hydrogen gas in communication with the cooled aggregation chamber. Advantageously, the hydrogen gas prevents oxidation of the target and silicon film covering a cooled inner surface of the aggregation chamber, and reduces the surface tension of the formed nanoclusters.
L'invention concerne une source de nanoagrégats, constituée: d'une chambre d'agrégation refroidie; d'un magnétron agencé pour pulvériser une cible, le magnétron étant en communication avec la chambre d'agrégation refroidie de telle sorte que des atomes pulvérisés de la cible soient reçus à l'intérieur de la chambre d'agrégation refroidie; d'une source de vide en communication avec la chambre d'agrégation refroidie; d'une source d'au moins un gaz d'agrégation noble en communication avec la chambre d'agrégation refroidie; et d'une source d'hydrogène gazeux en communication avec la chambre d'agrégation refroidie. De façon avantageuse, l'hydrogène gazeux empêche l'oxydation de la cible et du film de silicium qui recouvre une surface intérieure refroidie de la chambre d'agrégation, et réduit la tension de surface des nanoagrégats formés.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MANUFACTURE OR TREATMENT THEREOF</subject><subject>METALLURGY</subject><subject>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPCPJ3CXUO8fT3U_B3U3D09Q8K8PAPDVZw9HNRcA6KDA5x9PHx9HNVCPb08XT29-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGhgYGpqamBqaOhsbEqQIAvDYnHA</recordid><startdate>20100520</startdate><enddate>20100520</enddate><creator>BASKIN, EMANUEL</creator><creator>EPSTEIN, ALEXANDER</creator><creator>GARBER, VALERY</creator><creator>FAYER, ALEX</creator><scope>EVB</scope></search><sort><creationdate>20100520</creationdate><title>PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON</title><author>BASKIN, EMANUEL ; EPSTEIN, ALEXANDER ; GARBER, VALERY ; FAYER, ALEX</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010055505A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MANUFACTURE OR TREATMENT THEREOF</topic><topic>METALLURGY</topic><topic>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>BASKIN, EMANUEL</creatorcontrib><creatorcontrib>EPSTEIN, ALEXANDER</creatorcontrib><creatorcontrib>GARBER, VALERY</creatorcontrib><creatorcontrib>FAYER, ALEX</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BASKIN, EMANUEL</au><au>EPSTEIN, ALEXANDER</au><au>GARBER, VALERY</au><au>FAYER, ALEX</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON</title><date>2010-05-20</date><risdate>2010</risdate><abstract>A nanocluster source constituted of: a cooled aggregation chamber; a magnetron arranged to sputter a target, the magnetron in communication with the cooled aggregation chamber such that sputtered atoms of the target are received within the cooled aggregation chamber; a vacuum source in communication with the cooled aggregation chamber; a source of at least one noble aggregation gas in communication with the cooled aggregation chamber; and a source of hydrogen gas in communication with the cooled aggregation chamber. Advantageously, the hydrogen gas prevents oxidation of the target and silicon film covering a cooled inner surface of the aggregation chamber, and reduces the surface tension of the formed nanoclusters.
L'invention concerne une source de nanoagrégats, constituée: d'une chambre d'agrégation refroidie; d'un magnétron agencé pour pulvériser une cible, le magnétron étant en communication avec la chambre d'agrégation refroidie de telle sorte que des atomes pulvérisés de la cible soient reçus à l'intérieur de la chambre d'agrégation refroidie; d'une source de vide en communication avec la chambre d'agrégation refroidie; d'une source d'au moins un gaz d'agrégation noble en communication avec la chambre d'agrégation refroidie; et d'une source d'hydrogène gazeux en communication avec la chambre d'agrégation refroidie. De façon avantageuse, l'hydrogène gazeux empêche l'oxydation de la cible et du film de silicium qui recouvre une surface intérieure refroidie de la chambre d'agrégation, et réduit la tension de surface des nanoagrégats formés.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre |
| recordid | cdi_epo_espacenet_WO2010055505A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT THEREOF METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | PRODUCTION OF AMORPHOUS AND CRYSTALLINE SILICON |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T13%3A45%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BASKIN,%20EMANUEL&rft.date=2010-05-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2010055505A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |