PHASE CHANGE MEMORY CELLS AND FABRICATION THEREOF

A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phas...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOCHUPURACKAL, JINESH, B. P, WOLTERS, ROBERTUS, A. M, ZANDT, MICHAEL, A. A
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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