METHOD FOR MANUFACTURING AN INSTANT PULSE FILTER USING ANODIC OXIDATION AND INSTANT PULSE FILTER MANUFACTURED BY SAID METHOD

The present invention relates to manufacture of an instant pulse filter, which may cause a malfunction and a short lifespan of a semiconductor device, using an aluminium anodic oxidation method. More particularly, the present invention relates to a method for manufacturing an instant pulse filter using anodic oxidation, and an instant pulse filter manufactured by the method, the method comprising: the 1st step of forming an aluminium thin film layer (200) on the top of an insulator substrate (100); the 2nd step of forming an aluminium oxide thin film layer (300) having pores (310) by oxidizing the aluminium thin film layer (200) by anodic oxidation; the 3rd step of depositing metal on the top of the aluminium oxide thin layer film (300) in order to fill the pores (310) with the metal; the 4th step of removing the metal deposited from the region except the inside of the pores (310), and forming nano rods (400) inside the aluminium thin film layer (200); the 5th step of forming internal electrodes (500) on the top of the aluminium thin film layer (200) in which the nano rods are formed; the 6th step of forming a protective layer (600) on the internal electrodes and the aluminum thin film layer (200) in order to protect the aluminum thin film layer (200) and the internal electrodes from an external environment; and the 7th step of forming external electrodes (700) on both sides of a substrate having the protective layer (600). Accordingly, the method of the present invention can secure homogeneous distribution of conductors consisting of conductive nano rods and uniformity of an energy barrier, and thus can manufacture chip-type transient voltage protection parts having a better non-linear characteristic and a higher instant pulse capability, compared to the conventional technology. L'invention concerne un procédé de fabrication d'un filtre à impulsion instantanée susceptible d'entraîner un dysfonctionnement et de raccourcir la durée de vie d'un dispositif semi-conducteur, ledit procédé utilisant un procédé d'oxydation anodique d'aluminium. Plus particulièrement, un aspect technique de l'invention concerne un procédé utilisant une oxydation anodique pour fabriquer un filtre à impulsion instantanée, ce procédé comprenant les étapes suivantes: 1) former une couche mince d'aluminium (200) sur la face supérieure d'un substrat isolant (100); 2) former une couche mince d'oxyde d'aluminium dans laquelle les pores (310) sont formés par l'oxydation anodique de la couc