SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION
Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containi...
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| description | Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.
L'invention concerne des systèmes et des procédés de production de matériaux monocristallins tels que le silicium, les matériaux monocristallins pouvant être utilisés dans des applications de semi-conducteurs et photovoltaïques. Un creuset est reçu dans un four pour faire croître un lingot monocristallin, le creuset contenant initialement un germe monocristallin et un matériau de charge, où le germe cristallin est au moins partiellement fondu, et le matériau de charge est complètement fondu dans le creuset, ce qui est suivi par un procédé de croissance et de solidification. La croissance de matériaux monocristallins tels que des lingots de silicium est obtenue par solidification directionnelle, où l'extraction de chaleur lors de phases de croissance est obtenue par isolation qui est mobile par rapport à un creuset contenant une charge. Un échangeur de chaleur est également prévu pour réguler l'extraction de chaleur du creuset pendant le procédé de croissance et de solidification pour obtenir une croissance monocristalline. |
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L'invention concerne des systèmes et des procédés de production de matériaux monocristallins tels que le silicium, les matériaux monocristallins pouvant être utilisés dans des applications de semi-conducteurs et photovoltaïques. Un creuset est reçu dans un four pour faire croître un lingot monocristallin, le creuset contenant initialement un germe monocristallin et un matériau de charge, où le germe cristallin est au moins partiellement fondu, et le matériau de charge est complètement fondu dans le creuset, ce qui est suivi par un procédé de croissance et de solidification. La croissance de matériaux monocristallins tels que des lingots de silicium est obtenue par solidification directionnelle, où l'extraction de chaleur lors de phases de croissance est obtenue par isolation qui est mobile par rapport à un creuset contenant une charge. Un échangeur de chaleur est également prévu pour réguler l'extraction de chaleur du creuset pendant le procédé de croissance et de solidification pour obtenir une croissance monocristalline.</description><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100114&DB=EPODOC&CC=WO&NR=2010005705A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100114&DB=EPODOC&CC=WO&NR=2010005705A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHATTAK, CHANDRA, P</creatorcontrib><creatorcontrib>RAVI, BHUVARAGASAMY, G</creatorcontrib><creatorcontrib>PARTHASARATHY, SANTHANA, RAGHAVAN</creatorcontrib><title>SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION</title><description>Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.
L'invention concerne des systèmes et des procédés de production de matériaux monocristallins tels que le silicium, les matériaux monocristallins pouvant être utilisés dans des applications de semi-conducteurs et photovoltaïques. Un creuset est reçu dans un four pour faire croître un lingot monocristallin, le creuset contenant initialement un germe monocristallin et un matériau de charge, où le germe cristallin est au moins partiellement fondu, et le matériau de charge est complètement fondu dans le creuset, ce qui est suivi par un procédé de croissance et de solidification. La croissance de matériaux monocristallins tels que des lingots de silicium est obtenue par solidification directionnelle, où l'extraction de chaleur lors de phases de croissance est obtenue par isolation qui est mobile par rapport à un creuset contenant une charge. 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A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.
L'invention concerne des systèmes et des procédés de production de matériaux monocristallins tels que le silicium, les matériaux monocristallins pouvant être utilisés dans des applications de semi-conducteurs et photovoltaïques. Un creuset est reçu dans un four pour faire croître un lingot monocristallin, le creuset contenant initialement un germe monocristallin et un matériau de charge, où le germe cristallin est au moins partiellement fondu, et le matériau de charge est complètement fondu dans le creuset, ce qui est suivi par un procédé de croissance et de solidification. La croissance de matériaux monocristallins tels que des lingots de silicium est obtenue par solidification directionnelle, où l'extraction de chaleur lors de phases de croissance est obtenue par isolation qui est mobile par rapport à un creuset contenant une charge. Un échangeur de chaleur est également prévu pour réguler l'extraction de chaleur du creuset pendant le procédé de croissance et de solidification pour obtenir une croissance monocristalline.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION |
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