AN INTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR
A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing ga...
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| creator | NGAH, NOR, AZHADI ABDUL RANI, ROZINA LEE, HING WAH MOHAMD BADARUDDIN, SITI AISHAH ZAKARIA, AZLAN ABDULLAH, ALI ZAINI MAT HUSSIN, MOHD ROFEI MOHD ZAIN, AZLINA |
| description | A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing gate; an electrode domain (6) formed on the ion-sensitive film surrounding the periphery of the ion sensing gate (5) characterized in that the electrode domain (6) is made of tungsten, titanium or tungsten suicide.
L'invention concerne un capteur chimique qui comporte un transistor à effet de champ sensible aux ions (ISFET) comprenant un substrat (10) prévu avec une source (4) et un drain (3); une grille (5) de détection d'ions placée entre la source et le drain; un film (1) sensible aux ions formé sur la surface du substrat et la grille de détection d'ions; un domaine d'électrode (6) formé sur le film sensible aux ions et entourant le pourtour de la grille (5) de détection d'ions, le domaine d'électrode (6) étant caractérisé en ce qu'il est fait de tungstène, de titane ou d'une matière sacrificielle de tungstène. |
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L'invention concerne un capteur chimique qui comporte un transistor à effet de champ sensible aux ions (ISFET) comprenant un substrat (10) prévu avec une source (4) et un drain (3); une grille (5) de détection d'ions placée entre la source et le drain; un film (1) sensible aux ions formé sur la surface du substrat et la grille de détection d'ions; un domaine d'électrode (6) formé sur le film sensible aux ions et entourant le pourtour de la grille (5) de détection d'ions, le domaine d'électrode (6) étant caractérisé en ce qu'il est fait de tungstène, de titane ou d'une matière sacrificielle de tungstène.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090522&DB=EPODOC&CC=WO&NR=2009064166A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090522&DB=EPODOC&CC=WO&NR=2009064166A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NGAH, NOR, AZHADI</creatorcontrib><creatorcontrib>ABDUL RANI, ROZINA</creatorcontrib><creatorcontrib>LEE, HING WAH</creatorcontrib><creatorcontrib>MOHAMD BADARUDDIN, SITI AISHAH</creatorcontrib><creatorcontrib>ZAKARIA, AZLAN</creatorcontrib><creatorcontrib>ABDULLAH, ALI ZAINI</creatorcontrib><creatorcontrib>MAT HUSSIN, MOHD ROFEI</creatorcontrib><creatorcontrib>MOHD ZAIN, AZLINA</creatorcontrib><title>AN INTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR</title><description>A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing gate; an electrode domain (6) formed on the ion-sensitive film surrounding the periphery of the ion sensing gate (5) characterized in that the electrode domain (6) is made of tungsten, titanium or tungsten suicide.
L'invention concerne un capteur chimique qui comporte un transistor à effet de champ sensible aux ions (ISFET) comprenant un substrat (10) prévu avec une source (4) et un drain (3); une grille (5) de détection d'ions placée entre la source et le drain; un film (1) sensible aux ions formé sur la surface du substrat et la grille de détection d'ions; un domaine d'électrode (6) formé sur le film sensible aux ions et entourant le pourtour de la grille (5) de détection d'ions, le domaine d'électrode (6) étant caractérisé en ce qu'il est fait de tungstène, de titane ou d'une matière sacrificielle de tungstène.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBy9FPw9AtxdQ9yDHF1UfD091MIdvUL9gzxDHNVcPN09XFRcHVzc3UOUQgJcgSKB4f4B4FV-AfxMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL4cH8jAwNLAzMTQzMzRyNj4lQBAF3rKhE</recordid><startdate>20090522</startdate><enddate>20090522</enddate><creator>NGAH, NOR, AZHADI</creator><creator>ABDUL RANI, ROZINA</creator><creator>LEE, HING WAH</creator><creator>MOHAMD BADARUDDIN, SITI AISHAH</creator><creator>ZAKARIA, AZLAN</creator><creator>ABDULLAH, ALI ZAINI</creator><creator>MAT HUSSIN, MOHD ROFEI</creator><creator>MOHD ZAIN, AZLINA</creator><scope>EVB</scope></search><sort><creationdate>20090522</creationdate><title>AN INTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR</title><author>NGAH, NOR, AZHADI ; ABDUL RANI, ROZINA ; LEE, HING WAH ; MOHAMD BADARUDDIN, SITI AISHAH ; ZAKARIA, AZLAN ; ABDULLAH, ALI ZAINI ; MAT HUSSIN, MOHD ROFEI ; MOHD ZAIN, AZLINA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2009064166A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NGAH, NOR, AZHADI</creatorcontrib><creatorcontrib>ABDUL RANI, ROZINA</creatorcontrib><creatorcontrib>LEE, HING WAH</creatorcontrib><creatorcontrib>MOHAMD BADARUDDIN, SITI AISHAH</creatorcontrib><creatorcontrib>ZAKARIA, AZLAN</creatorcontrib><creatorcontrib>ABDULLAH, ALI ZAINI</creatorcontrib><creatorcontrib>MAT HUSSIN, MOHD ROFEI</creatorcontrib><creatorcontrib>MOHD ZAIN, AZLINA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NGAH, NOR, AZHADI</au><au>ABDUL RANI, ROZINA</au><au>LEE, HING WAH</au><au>MOHAMD BADARUDDIN, SITI AISHAH</au><au>ZAKARIA, AZLAN</au><au>ABDULLAH, ALI ZAINI</au><au>MAT HUSSIN, MOHD ROFEI</au><au>MOHD ZAIN, AZLINA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>AN INTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR</title><date>2009-05-22</date><risdate>2009</risdate><abstract>A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing gate; an electrode domain (6) formed on the ion-sensitive film surrounding the periphery of the ion sensing gate (5) characterized in that the electrode domain (6) is made of tungsten, titanium or tungsten suicide.
L'invention concerne un capteur chimique qui comporte un transistor à effet de champ sensible aux ions (ISFET) comprenant un substrat (10) prévu avec une source (4) et un drain (3); une grille (5) de détection d'ions placée entre la source et le drain; un film (1) sensible aux ions formé sur la surface du substrat et la grille de détection d'ions; un domaine d'électrode (6) formé sur le film sensible aux ions et entourant le pourtour de la grille (5) de détection d'ions, le domaine d'électrode (6) étant caractérisé en ce qu'il est fait de tungstène, de titane ou d'une matière sacrificielle de tungstène.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | AN INTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR |
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