HIGH LIFETIME CONSUMABLE SILICON NITRIDE-SILICON DIOXIDE PLASMA PROCESSING COMPONENTS

A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TAYLOR, TRAVIS R, RAMANUJAM, K. Y, SRINIVASAN, MUKUND, MIKIJELJ, BILJANA, WU, SHANGHUA, KADKHODAYAN, BOBBY
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!