METHOD AND SYSTEM FOR PROVIDING A METAL OXIDE SEMICONDUCTOR DEVICE HAVING A DRIFT ENHANCED CHANNEL

A method and system for providing a metal oxide semiconductor (MOS) device are described. The method and system include providing a source, a drain, and a channel residing between the source and the drain. At least a portion of the channel includes an alloy layer including an impurity having a grade...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ENICKS, DARWIN, GENE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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