NANO ELECTROMECHANICAL INTEGRATED-CIRCUIT FILTER
A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator posses a fundam...
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| creator | BADZEY, ROBERT, L GAIDARZHY, ALEXEI MOHANTY, PRITIRAJ |
| description | A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.
L'invention concerne un filtre de circuit intégré nanoélectromécanique ainsi qu'un procédé de fabrication associé. Ce filtre comprend un substrat de silicium ; une couche sacrificielle ; une couche de dispositif comprenant au moins un résonateur, ledit résonateur au moins comprenant des éléments excitables submicroniques et présentant une fréquence de mode fondamentale et une fréquence de mode collective, la fréquence de mode collective étant déterminée par la fréquence fondamentale des éléments submicroniques. |
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L'invention concerne un filtre de circuit intégré nanoélectromécanique ainsi qu'un procédé de fabrication associé. Ce filtre comprend un substrat de silicium ; une couche sacrificielle ; une couche de dispositif comprenant au moins un résonateur, ledit résonateur au moins comprenant des éléments excitables submicroniques et présentant une fréquence de mode fondamentale et une fréquence de mode collective, la fréquence de mode collective étant déterminée par la fréquence fondamentale des éléments submicroniques.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080327&DB=EPODOC&CC=WO&NR=2008036830A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080327&DB=EPODOC&CC=WO&NR=2008036830A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BADZEY, ROBERT, L</creatorcontrib><creatorcontrib>GAIDARZHY, ALEXEI</creatorcontrib><creatorcontrib>MOHANTY, PRITIRAJ</creatorcontrib><title>NANO ELECTROMECHANICAL INTEGRATED-CIRCUIT FILTER</title><description>A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.
L'invention concerne un filtre de circuit intégré nanoélectromécanique ainsi qu'un procédé de fabrication associé. Ce filtre comprend un substrat de silicium ; une couche sacrificielle ; une couche de dispositif comprenant au moins un résonateur, ledit résonateur au moins comprenant des éléments excitables submicroniques et présentant une fréquence de mode fondamentale et une fréquence de mode collective, la fréquence de mode collective étant déterminée par la fréquence fondamentale des éléments submicroniques.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwc_TzV3D1cXUOCfL3dXX2cPTzdHb0UfD0C3F1D3IMcXXRdfYMcg71DFFw8_QJcQ3iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBgYWBsZmFsYGjkbGxKkCANNSJ1E</recordid><startdate>20080327</startdate><enddate>20080327</enddate><creator>BADZEY, ROBERT, L</creator><creator>GAIDARZHY, ALEXEI</creator><creator>MOHANTY, PRITIRAJ</creator><scope>EVB</scope></search><sort><creationdate>20080327</creationdate><title>NANO ELECTROMECHANICAL INTEGRATED-CIRCUIT FILTER</title><author>BADZEY, ROBERT, L ; GAIDARZHY, ALEXEI ; MOHANTY, PRITIRAJ</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2008036830A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BADZEY, ROBERT, L</creatorcontrib><creatorcontrib>GAIDARZHY, ALEXEI</creatorcontrib><creatorcontrib>MOHANTY, PRITIRAJ</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BADZEY, ROBERT, L</au><au>GAIDARZHY, ALEXEI</au><au>MOHANTY, PRITIRAJ</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NANO ELECTROMECHANICAL INTEGRATED-CIRCUIT FILTER</title><date>2008-03-27</date><risdate>2008</risdate><abstract>A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.
L'invention concerne un filtre de circuit intégré nanoélectromécanique ainsi qu'un procédé de fabrication associé. Ce filtre comprend un substrat de silicium ; une couche sacrificielle ; une couche de dispositif comprenant au moins un résonateur, ledit résonateur au moins comprenant des éléments excitables submicroniques et présentant une fréquence de mode fondamentale et une fréquence de mode collective, la fréquence de mode collective étant déterminée par la fréquence fondamentale des éléments submicroniques.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES |
| title | NANO ELECTROMECHANICAL INTEGRATED-CIRCUIT FILTER |
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