RF POWER TRANSISTOR DEVICE WITH HIGH PERFORMANCE SHUNT CAPACITOR AND METHOD THEREOF

An integrated shunt capacitor comprises a bottom plate (62), a capacitor dielectric (92) overlying a portion of the bottom plate, a top plate (64) overlying the capacitor dielectric, a shield (74) overlying a portion of the top plate; and a metallization feature (70) disposed about and isolated from...

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Bibliographische Detailangaben

Hauptverfasser:	REN, XIAOWEI, LAMEY, DANIEL, J
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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