ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND NOVEL TANTALUM COMPLEXES
Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes. La présente invention concerne des procédés de dépôt de couches atomiqu...
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| creator | RADZEWICH, CATHERINE, E THOMPSON, JEFFERY, SCOTT |
| description | Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.
La présente invention concerne des procédés de dépôt de couches atomiques utilisés pour former sur des surfaces, des films contenant du tantale. Cette invention concerne également de nouveaux complexes de tantale qui peuvent être utilisés en tant que précurseurs de tantale dans les procédés de dépôt selon l'invention. |
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La présente invention concerne des procédés de dépôt de couches atomiques utilisés pour former sur des surfaces, des films contenant du tantale. Cette invention concerne également de nouveaux complexes de tantale qui peuvent être utilisés en tant que précurseurs de tantale dans les procédés de dépôt selon l'invention.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEELgkAQRr10iOo_DHQWTKPoOKyztrDuSDtanURiO0UZ9v8pITp3eo_HxzeNnihcGgUWz3SAnCr2Rgw7YA2CTtDWZaz4I8YZV4A2tvRQ-9F9fdCoKEYlpkEZExbkxAO6HBw3ZH8foLisLJ3Iz6PJtbsNYfHlLFpqErWPQ_9ow9B3l3APr_bIaZJsk9VunW0wzf5bvQEiYTlk</recordid><startdate>20070215</startdate><enddate>20070215</enddate><creator>RADZEWICH, CATHERINE, E</creator><creator>THOMPSON, JEFFERY, SCOTT</creator><scope>EVB</scope></search><sort><creationdate>20070215</creationdate><title>ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND NOVEL TANTALUM COMPLEXES</title><author>RADZEWICH, CATHERINE, E ; THOMPSON, JEFFERY, SCOTT</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2007019436A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2007</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RADZEWICH, CATHERINE, E</creatorcontrib><creatorcontrib>THOMPSON, JEFFERY, SCOTT</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RADZEWICH, CATHERINE, E</au><au>THOMPSON, JEFFERY, SCOTT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND NOVEL TANTALUM COMPLEXES</title><date>2007-02-15</date><risdate>2007</risdate><abstract>Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.
La présente invention concerne des procédés de dépôt de couches atomiques utilisés pour former sur des surfaces, des films contenant du tantale. Cette invention concerne également de nouveaux complexes de tantale qui peuvent être utilisés en tant que précurseurs de tantale dans les procédés de dépôt selon l'invention.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND NOVEL TANTALUM COMPLEXES |
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