CLEANING METHOD AND SOLUTION FOR CLEANING A WAFER IN A SINGLE WAFER PROCESS
The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WANG, HONG VERHAVERBEKE, STEVEN RAYANDAYAN, RONALD |
| description | The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.
L'invention concerne un procédé permettant d'utiliser une nouvelle solution nettoyante en un processus de nettoyage tranche par tranche. Selon l'invention, il est prévu, selon le procédé, d'utiliser une solution nettoyante en mode de nettoyage tranche par tranche et la solution nettoyante comprend au moins du dioxyde d'ammonium (NH4OH), du peroxyde d'hydrogène (H2O2), de l'eau (H2O) et un agent de chélation. Dans un mode de réalisation de la présente invention, le solution nettoyante contient également un tensioactif. L'invention concerne également un procédé permettant de combiner une étape hydroxyde d'ammonium, peroxyde d'hydrogène et agent de chélation avec une brève étape HF, de sorte à minimiser le temps de traitement, afin que l'ensemble du procédé élimine efficacement les impuretés d'aluminium et de fer, sans attaquer trop d'oxyde. Les procédés de nettoyage tranche par tranche peuvent également s'utiliser pour augmenter le rendement de tranches régénérées. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2006132989A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2006132989A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2006132989A33</originalsourceid><addsrcrecordid>eNrjZPB29nF19PP0c1fwdQ3x8HdRcPRzUQj29wkN8fT3U3DzD1KAK3BUCHd0cw1S8PQDMoOBIj6uUJGAIH9n1-BgHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oSH-5vZGBgZmhsZGlh6WhsTJwqAPkGLhQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CLEANING METHOD AND SOLUTION FOR CLEANING A WAFER IN A SINGLE WAFER PROCESS</title><source>esp@cenet</source><creator>WANG, HONG ; VERHAVERBEKE, STEVEN ; RAYANDAYAN, RONALD</creator><creatorcontrib>WANG, HONG ; VERHAVERBEKE, STEVEN ; RAYANDAYAN, RONALD</creatorcontrib><description>The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.
L'invention concerne un procédé permettant d'utiliser une nouvelle solution nettoyante en un processus de nettoyage tranche par tranche. Selon l'invention, il est prévu, selon le procédé, d'utiliser une solution nettoyante en mode de nettoyage tranche par tranche et la solution nettoyante comprend au moins du dioxyde d'ammonium (NH4OH), du peroxyde d'hydrogène (H2O2), de l'eau (H2O) et un agent de chélation. Dans un mode de réalisation de la présente invention, le solution nettoyante contient également un tensioactif. L'invention concerne également un procédé permettant de combiner une étape hydroxyde d'ammonium, peroxyde d'hydrogène et agent de chélation avec une brève étape HF, de sorte à minimiser le temps de traitement, afin que l'ensemble du procédé élimine efficacement les impuretés d'aluminium et de fer, sans attaquer trop d'oxyde. Les procédés de nettoyage tranche par tranche peuvent également s'utiliser pour augmenter le rendement de tranches régénérées.</description><language>eng ; fre</language><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES ; BASIC ELECTRIC ELEMENTS ; CANDLES ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; DETERGENT COMPOSITIONS ; DETERGENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FATTY ACIDS THEREFROM ; METALLURGY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; RECOVERY OF GLYCEROL ; RESIN SOAPS ; SEMICONDUCTOR DEVICES ; SOAP OR SOAP-MAKING ; TRANSPORTING ; USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070308&DB=EPODOC&CC=WO&NR=2006132989A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070308&DB=EPODOC&CC=WO&NR=2006132989A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG, HONG</creatorcontrib><creatorcontrib>VERHAVERBEKE, STEVEN</creatorcontrib><creatorcontrib>RAYANDAYAN, RONALD</creatorcontrib><title>CLEANING METHOD AND SOLUTION FOR CLEANING A WAFER IN A SINGLE WAFER PROCESS</title><description>The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.
L'invention concerne un procédé permettant d'utiliser une nouvelle solution nettoyante en un processus de nettoyage tranche par tranche. Selon l'invention, il est prévu, selon le procédé, d'utiliser une solution nettoyante en mode de nettoyage tranche par tranche et la solution nettoyante comprend au moins du dioxyde d'ammonium (NH4OH), du peroxyde d'hydrogène (H2O2), de l'eau (H2O) et un agent de chélation. Dans un mode de réalisation de la présente invention, le solution nettoyante contient également un tensioactif. L'invention concerne également un procédé permettant de combiner une étape hydroxyde d'ammonium, peroxyde d'hydrogène et agent de chélation avec une brève étape HF, de sorte à minimiser le temps de traitement, afin que l'ensemble du procédé élimine efficacement les impuretés d'aluminium et de fer, sans attaquer trop d'oxyde. Les procédés de nettoyage tranche par tranche peuvent également s'utiliser pour augmenter le rendement de tranches régénérées.</description><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CANDLES</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>DETERGENT COMPOSITIONS</subject><subject>DETERGENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FATTY ACIDS THEREFROM</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>RECOVERY OF GLYCEROL</subject><subject>RESIN SOAPS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOAP OR SOAP-MAKING</subject><subject>TRANSPORTING</subject><subject>USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB29nF19PP0c1fwdQ3x8HdRcPRzUQj29wkN8fT3U3DzD1KAK3BUCHd0cw1S8PQDMoOBIj6uUJGAIH9n1-BgHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oSH-5vZGBgZmhsZGlh6WhsTJwqAPkGLhQ</recordid><startdate>20070308</startdate><enddate>20070308</enddate><creator>WANG, HONG</creator><creator>VERHAVERBEKE, STEVEN</creator><creator>RAYANDAYAN, RONALD</creator><scope>EVB</scope></search><sort><creationdate>20070308</creationdate><title>CLEANING METHOD AND SOLUTION FOR CLEANING A WAFER IN A SINGLE WAFER PROCESS</title><author>WANG, HONG ; VERHAVERBEKE, STEVEN ; RAYANDAYAN, RONALD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2006132989A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2007</creationdate><topic>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CANDLES</topic><topic>CHEMISTRY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>DETERGENT COMPOSITIONS</topic><topic>DETERGENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FATTY ACIDS THEREFROM</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>RECOVERY OF GLYCEROL</topic><topic>RESIN SOAPS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOAP OR SOAP-MAKING</topic><topic>TRANSPORTING</topic><topic>USE OF SINGLE SUBSTANCES AS DETERGENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG, HONG</creatorcontrib><creatorcontrib>VERHAVERBEKE, STEVEN</creatorcontrib><creatorcontrib>RAYANDAYAN, RONALD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG, HONG</au><au>VERHAVERBEKE, STEVEN</au><au>RAYANDAYAN, RONALD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CLEANING METHOD AND SOLUTION FOR CLEANING A WAFER IN A SINGLE WAFER PROCESS</title><date>2007-03-08</date><risdate>2007</risdate><abstract>The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.
L'invention concerne un procédé permettant d'utiliser une nouvelle solution nettoyante en un processus de nettoyage tranche par tranche. Selon l'invention, il est prévu, selon le procédé, d'utiliser une solution nettoyante en mode de nettoyage tranche par tranche et la solution nettoyante comprend au moins du dioxyde d'ammonium (NH4OH), du peroxyde d'hydrogène (H2O2), de l'eau (H2O) et un agent de chélation. Dans un mode de réalisation de la présente invention, le solution nettoyante contient également un tensioactif. L'invention concerne également un procédé permettant de combiner une étape hydroxyde d'ammonium, peroxyde d'hydrogène et agent de chélation avec une brève étape HF, de sorte à minimiser le temps de traitement, afin que l'ensemble du procédé élimine efficacement les impuretés d'aluminium et de fer, sans attaquer trop d'oxyde. Les procédés de nettoyage tranche par tranche peuvent également s'utiliser pour augmenter le rendement de tranches régénérées.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre |
| recordid | cdi_epo_espacenet_WO2006132989A3 |
| source | esp@cenet |
| subjects | ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CLEANING CLEANING IN GENERAL DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING TRANSPORTING USE OF SINGLE SUBSTANCES AS DETERGENTS |
| title | CLEANING METHOD AND SOLUTION FOR CLEANING A WAFER IN A SINGLE WAFER PROCESS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T11%3A55%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WANG,%20HONG&rft.date=2007-03-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2006132989A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |