PROCESS FOR REMOVAL OF METALS AND ALLOYS FROM A SUBSTRATE
A metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia can be effectively removed from a substrate, and particularly a silicon wafer substrate by a method of application of a composition having a HC1(concentrated)/hydrogen peroxide(concent...
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| creator | FUSSY, MICHAEL OLSON, ERIK, D HANESTAD, RONALD, J |
| description | A metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia can be effectively removed from a substrate, and particularly a silicon wafer substrate by a method of application of a composition having a HC1(concentrated)/hydrogen peroxide(concentrated) volume ratio of about 1:1 to about 4:1 that is substantially free of added water. In another embodiment, a metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia is removed from a substrate by a composition comprising HC1(concentrated)/hydrogen peroxide(concentrated)/water in a volume ratio of from about 2:0.5:4 to about 4:2:4. The composition, heated to a temperature of about 60° C. to about 100°C, is applied to a substrate having the metal or metal alloy thereon, which is preferably heated to a temperature of from about 50°C to about 100°C. The metal or metal alloy preferably is platinum metal or a metal alloy comprising platinum metal, and the substrate is a silicon wafer substrate.
Il est possible d'éliminer efficacement d'un substrat, et en particulier d'un substrat de tranche de silicium, un métal soluble dans l'eau régale ou un alliage métallique contenant un métal soluble dans l'eau régale, par un procédé d'application d'une composition quasiment exempte d'eau présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré), d'environ 1:1 à environ 4:1. Dans une autre exécution, il est possible d'éliminer d'un substrat, et en particulier d'une tranche de silicium, un métal ou un alliage métallique soluble dans l'eau régale, par un procédé d'application d'une composition présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré)/eau, d'environ 2:0,5:4 à environ 4:2:4. Une telle composition chauffée à une température d'environ 60 °C à environ 100 °C, s'applique à un substrat couvert du métal ou de l'alliage métallique, lui-même chauffé à une température d'environ 50 °C à environ 100 °C. Le métal ou l'alliage sont de préférence le platine ou un alliage au platine, et le substrat est une tranche de silicium. |
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Il est possible d'éliminer efficacement d'un substrat, et en particulier d'un substrat de tranche de silicium, un métal soluble dans l'eau régale ou un alliage métallique contenant un métal soluble dans l'eau régale, par un procédé d'application d'une composition quasiment exempte d'eau présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré), d'environ 1:1 à environ 4:1. Dans une autre exécution, il est possible d'éliminer d'un substrat, et en particulier d'une tranche de silicium, un métal ou un alliage métallique soluble dans l'eau régale, par un procédé d'application d'une composition présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré)/eau, d'environ 2:0,5:4 à environ 4:2:4. Une telle composition chauffée à une température d'environ 60 °C à environ 100 °C, s'applique à un substrat couvert du métal ou de l'alliage métallique, lui-même chauffé à une température d'environ 50 °C à environ 100 °C. Le métal ou l'alliage sont de préférence le platine ou un alliage au platine, et le substrat est une tranche de silicium.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061207&DB=EPODOC&CC=WO&NR=2006130439A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061207&DB=EPODOC&CC=WO&NR=2006130439A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUSSY, MICHAEL</creatorcontrib><creatorcontrib>OLSON, ERIK, D</creatorcontrib><creatorcontrib>HANESTAD, RONALD, J</creatorcontrib><title>PROCESS FOR REMOVAL OF METALS AND ALLOYS FROM A SUBSTRATE</title><description>A metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia can be effectively removed from a substrate, and particularly a silicon wafer substrate by a method of application of a composition having a HC1(concentrated)/hydrogen peroxide(concentrated) volume ratio of about 1:1 to about 4:1 that is substantially free of added water. In another embodiment, a metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia is removed from a substrate by a composition comprising HC1(concentrated)/hydrogen peroxide(concentrated)/water in a volume ratio of from about 2:0.5:4 to about 4:2:4. The composition, heated to a temperature of about 60° C. to about 100°C, is applied to a substrate having the metal or metal alloy thereon, which is preferably heated to a temperature of from about 50°C to about 100°C. The metal or metal alloy preferably is platinum metal or a metal alloy comprising platinum metal, and the substrate is a silicon wafer substrate.
Il est possible d'éliminer efficacement d'un substrat, et en particulier d'un substrat de tranche de silicium, un métal soluble dans l'eau régale ou un alliage métallique contenant un métal soluble dans l'eau régale, par un procédé d'application d'une composition quasiment exempte d'eau présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré), d'environ 1:1 à environ 4:1. Dans une autre exécution, il est possible d'éliminer d'un substrat, et en particulier d'une tranche de silicium, un métal ou un alliage métallique soluble dans l'eau régale, par un procédé d'application d'une composition présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré)/eau, d'environ 2:0,5:4 à environ 4:2:4. Une telle composition chauffée à une température d'environ 60 °C à environ 100 °C, s'applique à un substrat couvert du métal ou de l'alliage métallique, lui-même chauffé à une température d'environ 50 °C à environ 100 °C. 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In another embodiment, a metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia is removed from a substrate by a composition comprising HC1(concentrated)/hydrogen peroxide(concentrated)/water in a volume ratio of from about 2:0.5:4 to about 4:2:4. The composition, heated to a temperature of about 60° C. to about 100°C, is applied to a substrate having the metal or metal alloy thereon, which is preferably heated to a temperature of from about 50°C to about 100°C. The metal or metal alloy preferably is platinum metal or a metal alloy comprising platinum metal, and the substrate is a silicon wafer substrate.
Il est possible d'éliminer efficacement d'un substrat, et en particulier d'un substrat de tranche de silicium, un métal soluble dans l'eau régale ou un alliage métallique contenant un métal soluble dans l'eau régale, par un procédé d'application d'une composition quasiment exempte d'eau présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré), d'environ 1:1 à environ 4:1. Dans une autre exécution, il est possible d'éliminer d'un substrat, et en particulier d'une tranche de silicium, un métal ou un alliage métallique soluble dans l'eau régale, par un procédé d'application d'une composition présentant un rapport volumique HC1(concentré)/peroxyde d'hydrogène (concentré)/eau, d'environ 2:0,5:4 à environ 4:2:4. Une telle composition chauffée à une température d'environ 60 °C à environ 100 °C, s'applique à un substrat couvert du métal ou de l'alliage métallique, lui-même chauffé à une température d'environ 50 °C à environ 100 °C. Le métal ou l'alliage sont de préférence le platine ou un alliage au platine, et le substrat est une tranche de silicium.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | PROCESS FOR REMOVAL OF METALS AND ALLOYS FROM A SUBSTRATE |
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