MEMORY STRUCTURE AND METHOD OF PROGRAMMING

A memory and a method for programming a memory device are discussed. The method comprises selecting (32) a cell to program, wherein the cell is coupled to a bit line, applying (34) a first programming pulse, wherein the first programming pulse comprises applying a first voltage to the bit line, veri...

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Bibliographische Detailangaben

1. Verfasser:	LI, CHI NAN BRIAN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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