METHODS FOR RINSING MICROELECTRONIC SUBSTRATES UTILIZING COOL RINSE FLUID WITHIN A GAS ENVIRONMENT INCLUDING A DRYING ENHANCEMENT SUBSTANCE
Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the mic...
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| creator | GAST, TRACY, A |
| description | Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device and drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying.
L'invention concerne le rinçage et le séchage d'une surface d'un dispositif microélectronique et l'amélioration du retrait du fluide de rinçage de la surface du dispositif microélectronique lors de la rotation du dispositif microélectronique en tant qu'étape de l'opération de traitement de pulvérisation. Le fluide de rinçage est généralement dirigé vers la surface du dispositif microélectronique et le gaz de séchage est cédé après l'étape de rinçage. Pendant au moins une partie à la fois de l'étape de rinçage et de l'étape de séchage, une substance d'amélioration de séchage, telle que IPA, est cédée pour améliorer le rinçage et le séchage. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2006107569A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2006107569A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2006107569A23</originalsourceid><addsrcrecordid>eNqNjEEKwjAURLtxIeodPrgWakXFZUx-2w_pDySpRTelSFyJFuotvLSmeABXM8PMm2nyrtCXRjnIjQVL7IgLqEhagxqlt4ZJgquPzlvh0UHtSdMljqQxeiQQcl2TgoZ8SQwCCuEA-URfuEL2QCx1rSIjQNlzNMilYIljPb7HNE8mt-4-hMVPZ8kyRy_LVeifbRj67hoe4dU2JkvT3Trdb3cHkW3-W30Ad2hAsQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHODS FOR RINSING MICROELECTRONIC SUBSTRATES UTILIZING COOL RINSE FLUID WITHIN A GAS ENVIRONMENT INCLUDING A DRYING ENHANCEMENT SUBSTANCE</title><source>esp@cenet</source><creator>GAST, TRACY, A</creator><creatorcontrib>GAST, TRACY, A</creatorcontrib><description>Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device and drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying.
L'invention concerne le rinçage et le séchage d'une surface d'un dispositif microélectronique et l'amélioration du retrait du fluide de rinçage de la surface du dispositif microélectronique lors de la rotation du dispositif microélectronique en tant qu'étape de l'opération de traitement de pulvérisation. Le fluide de rinçage est généralement dirigé vers la surface du dispositif microélectronique et le gaz de séchage est cédé après l'étape de rinçage. Pendant au moins une partie à la fois de l'étape de rinçage et de l'étape de séchage, une substance d'amélioration de séchage, telle que IPA, est cédée pour améliorer le rinçage et le séchage.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061012&DB=EPODOC&CC=WO&NR=2006107569A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061012&DB=EPODOC&CC=WO&NR=2006107569A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GAST, TRACY, A</creatorcontrib><title>METHODS FOR RINSING MICROELECTRONIC SUBSTRATES UTILIZING COOL RINSE FLUID WITHIN A GAS ENVIRONMENT INCLUDING A DRYING ENHANCEMENT SUBSTANCE</title><description>Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device and drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying.
L'invention concerne le rinçage et le séchage d'une surface d'un dispositif microélectronique et l'amélioration du retrait du fluide de rinçage de la surface du dispositif microélectronique lors de la rotation du dispositif microélectronique en tant qu'étape de l'opération de traitement de pulvérisation. Le fluide de rinçage est généralement dirigé vers la surface du dispositif microélectronique et le gaz de séchage est cédé après l'étape de rinçage. Pendant au moins une partie à la fois de l'étape de rinçage et de l'étape de séchage, une substance d'amélioration de séchage, telle que IPA, est cédée pour améliorer le rinçage et le séchage.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEEKwjAURLtxIeodPrgWakXFZUx-2w_pDySpRTelSFyJFuotvLSmeABXM8PMm2nyrtCXRjnIjQVL7IgLqEhagxqlt4ZJgquPzlvh0UHtSdMljqQxeiQQcl2TgoZ8SQwCCuEA-URfuEL2QCx1rSIjQNlzNMilYIljPb7HNE8mt-4-hMVPZ8kyRy_LVeifbRj67hoe4dU2JkvT3Trdb3cHkW3-W30Ad2hAsQ</recordid><startdate>20061012</startdate><enddate>20061012</enddate><creator>GAST, TRACY, A</creator><scope>EVB</scope></search><sort><creationdate>20061012</creationdate><title>METHODS FOR RINSING MICROELECTRONIC SUBSTRATES UTILIZING COOL RINSE FLUID WITHIN A GAS ENVIRONMENT INCLUDING A DRYING ENHANCEMENT SUBSTANCE</title><author>GAST, TRACY, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2006107569A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GAST, TRACY, A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GAST, TRACY, A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS FOR RINSING MICROELECTRONIC SUBSTRATES UTILIZING COOL RINSE FLUID WITHIN A GAS ENVIRONMENT INCLUDING A DRYING ENHANCEMENT SUBSTANCE</title><date>2006-10-12</date><risdate>2006</risdate><abstract>Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device and drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying.
L'invention concerne le rinçage et le séchage d'une surface d'un dispositif microélectronique et l'amélioration du retrait du fluide de rinçage de la surface du dispositif microélectronique lors de la rotation du dispositif microélectronique en tant qu'étape de l'opération de traitement de pulvérisation. Le fluide de rinçage est généralement dirigé vers la surface du dispositif microélectronique et le gaz de séchage est cédé après l'étape de rinçage. Pendant au moins une partie à la fois de l'étape de rinçage et de l'étape de séchage, une substance d'amélioration de séchage, telle que IPA, est cédée pour améliorer le rinçage et le séchage.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHODS FOR RINSING MICROELECTRONIC SUBSTRATES UTILIZING COOL RINSE FLUID WITHIN A GAS ENVIRONMENT INCLUDING A DRYING ENHANCEMENT SUBSTANCE |
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