METHOD AND APPARATUS FOR EUV PLASMA SOURCE TARGET DELIVERY TARGET MATERIAL HANDLING
An EUV target delivery system and method are disclosed which may comprise: a target material purification system connected to deliver liquid target material comprising: a first container and a second container in fluid contact with the target material reservoir; a filter intermediate the first chamb...
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| creator | BYKANOV, ALEXANDER, N |
| description | An EUV target delivery system and method are disclosed which may comprise: a target material purification system connected to deliver liquid target material comprising: a first container and a second container in fluid contact with the target material reservoir; a filter intermediate the first chamber and the second chamber; a liquid target material agitation mechanism, or at least one purification chamber containing the target material in a form reactive with impurities contained in the inert gas reacting with such impurities and removing from the inert gas the impurities, or providing an evaporation chamber in fluid communication with an impurity chamber and with a target droplet mechanism liquid target material reservoir and containing liquid source material; heating the liquid source material to a first temperature sufficient to evaporate a first set of contaminants; heating the liquid source material to a second temperature sufficient to evaporate lithium.
L'invention concerne un système et un procédé de distribution de cible EUV, lesquels peuvent comprendre: un système de purification de matériau cible monté de manière à distribuer un matériau cible liquide, comprenant un premier contenant et un second contenant en contact fluidique avec le réservoir de matériau cible; un filtre placé entre la première chambre et la seconde chambre; un mécanisme d'agitation du matériau cible liquide, ou au moins une chambre de purification contenant le matériau cible sous une forme réagissant avec des impuretés contenues dans le gaz inerte, de manière à produire une réaction du matériau cible avec les impuretés et l'extraction de ces dernières du gaz inerte, ou comprenant une chambre d'évaporation en communication fluidique avec une chambre d'impuretés, et comportant en outre un réservoir de matériau cible liquide pourvu d'un mécanisme de formation de gouttelettes, qui contient un matériau source liquide. Le matériau source liquide est chauffé à une première température suffisante pour provoquer l'évaporation d'un premier ensemble de contaminants, puis le matériau source liquide est chauffé à une seconde température suffisante pour provoquer l'évaporation du lithium. |
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L'invention concerne un système et un procédé de distribution de cible EUV, lesquels peuvent comprendre: un système de purification de matériau cible monté de manière à distribuer un matériau cible liquide, comprenant un premier contenant et un second contenant en contact fluidique avec le réservoir de matériau cible; un filtre placé entre la première chambre et la seconde chambre; un mécanisme d'agitation du matériau cible liquide, ou au moins une chambre de purification contenant le matériau cible sous une forme réagissant avec des impuretés contenues dans le gaz inerte, de manière à produire une réaction du matériau cible avec les impuretés et l'extraction de ces dernières du gaz inerte, ou comprenant une chambre d'évaporation en communication fluidique avec une chambre d'impuretés, et comportant en outre un réservoir de matériau cible liquide pourvu d'un mécanisme de formation de gouttelettes, qui contient un matériau source liquide. Le matériau source liquide est chauffé à une première température suffisante pour provoquer l'évaporation d'un premier ensemble de contaminants, puis le matériau source liquide est chauffé à une seconde température suffisante pour provoquer l'évaporation du lithium.</description><language>eng ; fre</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CINEMATOGRAPHY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; FERROUS OR NON-FERROUS ALLOYS ; HOLOGRAPHY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MATERIALS THEREFOR ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; NANOTECHNOLOGY ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PRETREATMENT OF RAW MATERIALS ; PRODUCTION AND REFINING OF METALS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TREATMENT OF ALLOYS OR NON-FERROUS METALS ; X-RAY TECHNIQUE</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060831&DB=EPODOC&CC=WO&NR=2006091819A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060831&DB=EPODOC&CC=WO&NR=2006091819A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BYKANOV, ALEXANDER, N</creatorcontrib><title>METHOD AND APPARATUS FOR EUV PLASMA SOURCE TARGET DELIVERY TARGET MATERIAL HANDLING</title><description>An EUV target delivery system and method are disclosed which may comprise: a target material purification system connected to deliver liquid target material comprising: a first container and a second container in fluid contact with the target material reservoir; a filter intermediate the first chamber and the second chamber; a liquid target material agitation mechanism, or at least one purification chamber containing the target material in a form reactive with impurities contained in the inert gas reacting with such impurities and removing from the inert gas the impurities, or providing an evaporation chamber in fluid communication with an impurity chamber and with a target droplet mechanism liquid target material reservoir and containing liquid source material; heating the liquid source material to a first temperature sufficient to evaporate a first set of contaminants; heating the liquid source material to a second temperature sufficient to evaporate lithium.
L'invention concerne un système et un procédé de distribution de cible EUV, lesquels peuvent comprendre: un système de purification de matériau cible monté de manière à distribuer un matériau cible liquide, comprenant un premier contenant et un second contenant en contact fluidique avec le réservoir de matériau cible; un filtre placé entre la première chambre et la seconde chambre; un mécanisme d'agitation du matériau cible liquide, ou au moins une chambre de purification contenant le matériau cible sous une forme réagissant avec des impuretés contenues dans le gaz inerte, de manière à produire une réaction du matériau cible avec les impuretés et l'extraction de ces dernières du gaz inerte, ou comprenant une chambre d'évaporation en communication fluidique avec une chambre d'impuretés, et comportant en outre un réservoir de matériau cible liquide pourvu d'un mécanisme de formation de gouttelettes, qui contient un matériau source liquide. Le matériau source liquide est chauffé à une première température suffisante pour provoquer l'évaporation d'un premier ensemble de contaminants, puis le matériau source liquide est chauffé à une seconde température suffisante pour provoquer l'évaporation du lithium.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>HOLOGRAPHY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>NANOTECHNOLOGY</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PRETREATMENT OF RAW MATERIALS</subject><subject>PRODUCTION AND REFINING OF METALS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><subject>X-RAY TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj2dQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAXX0DCFAB_HYF9HhWD_0CBnV4UQxyB31xAFF1cfzzDXoEgY39cxxDXI09FHwQNoiI-nnzsPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYkP9zcyMDAzsDS0MLR0NDImThUAtR0wxQ</recordid><startdate>20060831</startdate><enddate>20060831</enddate><creator>BYKANOV, ALEXANDER, N</creator><scope>EVB</scope></search><sort><creationdate>20060831</creationdate><title>METHOD AND APPARATUS FOR EUV PLASMA SOURCE TARGET DELIVERY TARGET MATERIAL HANDLING</title><author>BYKANOV, ALEXANDER, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2006091819A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2006</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>HOLOGRAPHY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>NANOTECHNOLOGY</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PRETREATMENT OF RAW MATERIALS</topic><topic>PRODUCTION AND REFINING OF METALS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><topic>X-RAY TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>BYKANOV, ALEXANDER, N</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BYKANOV, ALEXANDER, N</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR EUV PLASMA SOURCE TARGET DELIVERY TARGET MATERIAL HANDLING</title><date>2006-08-31</date><risdate>2006</risdate><abstract>An EUV target delivery system and method are disclosed which may comprise: a target material purification system connected to deliver liquid target material comprising: a first container and a second container in fluid contact with the target material reservoir; a filter intermediate the first chamber and the second chamber; a liquid target material agitation mechanism, or at least one purification chamber containing the target material in a form reactive with impurities contained in the inert gas reacting with such impurities and removing from the inert gas the impurities, or providing an evaporation chamber in fluid communication with an impurity chamber and with a target droplet mechanism liquid target material reservoir and containing liquid source material; heating the liquid source material to a first temperature sufficient to evaporate a first set of contaminants; heating the liquid source material to a second temperature sufficient to evaporate lithium.
L'invention concerne un système et un procédé de distribution de cible EUV, lesquels peuvent comprendre: un système de purification de matériau cible monté de manière à distribuer un matériau cible liquide, comprenant un premier contenant et un second contenant en contact fluidique avec le réservoir de matériau cible; un filtre placé entre la première chambre et la seconde chambre; un mécanisme d'agitation du matériau cible liquide, ou au moins une chambre de purification contenant le matériau cible sous une forme réagissant avec des impuretés contenues dans le gaz inerte, de manière à produire une réaction du matériau cible avec les impuretés et l'extraction de ces dernières du gaz inerte, ou comprenant une chambre d'évaporation en communication fluidique avec une chambre d'impuretés, et comportant en outre un réservoir de matériau cible liquide pourvu d'un mécanisme de formation de gouttelettes, qui contient un matériau source liquide. Le matériau source liquide est chauffé à une première température suffisante pour provoquer l'évaporation d'un premier ensemble de contaminants, puis le matériau source liquide est chauffé à une seconde température suffisante pour provoquer l'évaporation du lithium.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FERROUS OR NON-FERROUS ALLOYS HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRETREATMENT OF RAW MATERIALS PRODUCTION AND REFINING OF METALS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS X-RAY TECHNIQUE |
| title | METHOD AND APPARATUS FOR EUV PLASMA SOURCE TARGET DELIVERY TARGET MATERIAL HANDLING |
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