STEREOLITHOGRAPHIC SEAL AND SUPPORT STRUCTURE FOR SEMICONDUCTOR WAFER
A Support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending invwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed...
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| creator | DAVIS, STEWART, A FLAHARTY, GRANT, R |
| description | A Support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending invwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed, the support structure being of desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and abou the periphery. The support structure further strengthens the work piece against flexural failure.
Une structure de support est appliquée directement au premier côté d'une pièce à usiner ou d'une tranche semi-conductrice par procédé stéréolithographique, couche par couche, sur tout le pourtour et en direction de l'intérieur de la périphérie de la tranche et à l'extérieur de la zone sélectionnée à l'intérieur d'une tranche de circuit désirée dans laquelle est placé le motif de circuit désiré. La structure de support a une hauteur désirée et est faite d'un matériau résistant à un procédé de gravure par acide, de manière à isoler de l'acide le motif de circuit dans la zone sélectionnée lorsque la pièce à usiner est soumise à l'action d'un acide sur le deuxième côté opposé et sur la périphérie. La structure de support protège encore mieux la pièce à usiner contre la rupture de flexion. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2004104708A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2004104708A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2004104708A23</originalsourceid><addsrcrecordid>eNrjZHANDnENcvX38Qzx8HcPcgzw8HRWCHZ19FFw9HNRCA4NCPAPClEIDgkKdQ4JDXJVcPMPAkr7ejr7-7kAhYC8cEc31yAeBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIf7m9kYGBiaGBibmDhaGRMnCoAgKItgw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>STEREOLITHOGRAPHIC SEAL AND SUPPORT STRUCTURE FOR SEMICONDUCTOR WAFER</title><source>esp@cenet</source><creator>DAVIS, STEWART, A ; FLAHARTY, GRANT, R</creator><creatorcontrib>DAVIS, STEWART, A ; FLAHARTY, GRANT, R</creatorcontrib><description>A Support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending invwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed, the support structure being of desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and abou the periphery. The support structure further strengthens the work piece against flexural failure.
Une structure de support est appliquée directement au premier côté d'une pièce à usiner ou d'une tranche semi-conductrice par procédé stéréolithographique, couche par couche, sur tout le pourtour et en direction de l'intérieur de la périphérie de la tranche et à l'extérieur de la zone sélectionnée à l'intérieur d'une tranche de circuit désirée dans laquelle est placé le motif de circuit désiré. La structure de support a une hauteur désirée et est faite d'un matériau résistant à un procédé de gravure par acide, de manière à isoler de l'acide le motif de circuit dans la zone sélectionnée lorsque la pièce à usiner est soumise à l'action d'un acide sur le deuxième côté opposé et sur la périphérie. La structure de support protège encore mieux la pièce à usiner contre la rupture de flexion.</description><edition>7</edition><language>eng ; fre</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041202&DB=EPODOC&CC=WO&NR=2004104708A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041202&DB=EPODOC&CC=WO&NR=2004104708A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVIS, STEWART, A</creatorcontrib><creatorcontrib>FLAHARTY, GRANT, R</creatorcontrib><title>STEREOLITHOGRAPHIC SEAL AND SUPPORT STRUCTURE FOR SEMICONDUCTOR WAFER</title><description>A Support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending invwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed, the support structure being of desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and abou the periphery. The support structure further strengthens the work piece against flexural failure.
Une structure de support est appliquée directement au premier côté d'une pièce à usiner ou d'une tranche semi-conductrice par procédé stéréolithographique, couche par couche, sur tout le pourtour et en direction de l'intérieur de la périphérie de la tranche et à l'extérieur de la zone sélectionnée à l'intérieur d'une tranche de circuit désirée dans laquelle est placé le motif de circuit désiré. La structure de support a une hauteur désirée et est faite d'un matériau résistant à un procédé de gravure par acide, de manière à isoler de l'acide le motif de circuit dans la zone sélectionnée lorsque la pièce à usiner est soumise à l'action d'un acide sur le deuxième côté opposé et sur la périphérie. La structure de support protège encore mieux la pièce à usiner contre la rupture de flexion.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANDnENcvX38Qzx8HcPcgzw8HRWCHZ19FFw9HNRCA4NCPAPClEIDgkKdQ4JDXJVcPMPAkr7ejr7-7kAhYC8cEc31yAeBta0xJziVF4ozc2g7OYa4uyhm1qQH59aXJCYnJqXWhIf7m9kYGBiaGBibmDhaGRMnCoAgKItgw</recordid><startdate>20041202</startdate><enddate>20041202</enddate><creator>DAVIS, STEWART, A</creator><creator>FLAHARTY, GRANT, R</creator><scope>EVB</scope></search><sort><creationdate>20041202</creationdate><title>STEREOLITHOGRAPHIC SEAL AND SUPPORT STRUCTURE FOR SEMICONDUCTOR WAFER</title><author>DAVIS, STEWART, A ; FLAHARTY, GRANT, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2004104708A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2004</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVIS, STEWART, A</creatorcontrib><creatorcontrib>FLAHARTY, GRANT, R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVIS, STEWART, A</au><au>FLAHARTY, GRANT, R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>STEREOLITHOGRAPHIC SEAL AND SUPPORT STRUCTURE FOR SEMICONDUCTOR WAFER</title><date>2004-12-02</date><risdate>2004</risdate><abstract>A Support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending invwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed, the support structure being of desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and abou the periphery. The support structure further strengthens the work piece against flexural failure.
Une structure de support est appliquée directement au premier côté d'une pièce à usiner ou d'une tranche semi-conductrice par procédé stéréolithographique, couche par couche, sur tout le pourtour et en direction de l'intérieur de la périphérie de la tranche et à l'extérieur de la zone sélectionnée à l'intérieur d'une tranche de circuit désirée dans laquelle est placé le motif de circuit désiré. La structure de support a une hauteur désirée et est faite d'un matériau résistant à un procédé de gravure par acide, de manière à isoler de l'acide le motif de circuit dans la zone sélectionnée lorsque la pièce à usiner est soumise à l'action d'un acide sur le deuxième côté opposé et sur la périphérie. La structure de support protège encore mieux la pièce à usiner contre la rupture de flexion.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS |
| title | STEREOLITHOGRAPHIC SEAL AND SUPPORT STRUCTURE FOR SEMICONDUCTOR WAFER |
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