METHOD FOR MAKING THIN-FILM SEMICONDUCTORS BASED ON I-III-VI2 COMPOUNDS, FOR PHOTOVOLTAIC APPLICATIONS

The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrod...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GRAND, PIERRE, PHILIPPE, TAUNIER, STEPHANE, GUIMARD, DENIS, LINCOT, DANIEL, VEDEL, JACQUES, MAHE, MICHEL, KERREC, OLIVIER, GUILLEMOLES, JEAN-FRANCOIS, BEN-FARAH, MOEZ, COWACHE, PIERRE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!