METHOD FOR INDUCING CONTROLLED CLEAVAGE OF POLYRYSTALLINE SILICON ROD
To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw (120) is induced in a filament (116) on which silicon will be deposited to produce a rod. The flaw (120) causes the grown rod to have a cleavage plane (122) such t...
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| creator | KECK, DAVID OSBORNE, EDWARD, W KAMRUD, HALVOR |
| description | To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw (120) is induced in a filament (116) on which silicon will be deposited to produce a rod. The flaw (120) causes the grown rod to have a cleavage plane (122) such that the rod will break in a controlled manner at a desired location. The flaw (120) can be placed at a location selected such that reakage at the cleavage plane (122) will produce long rods and thereby improve the yield of the rod growing process. Such a flaw (120) will also have the effect of minimizing unseable rod length losses due to spalling.
Pour parer aux problèmes liés à la formation de fissures et à l'écaillage non souhaités au cours de la croissance d'un barreau de silicium polycristallin, une brèche (120) est formée dans le filament (116) sur lequel sera déposé le silicium pour former un barreau. Cette brèche (120) confère au barreau ainsi obtenu un plan de clivage (122) qui permet à ce dernier de se casser de façon contrôlée à l'endroit souhaité. Cette brèche (120) peut être formée à l'endroit choisi pour que la rupture au niveau du plan de clivage (122) permette d'obtenir de longs barreaux. Ceci permet d'améliorer le rendement du procédé de croissance de barreaux. Cette brèche (120) permet également de réduire au minimum les pertes de longueurs de barreaux utilisables dues à l'écaillage. |
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Pour parer aux problèmes liés à la formation de fissures et à l'écaillage non souhaités au cours de la croissance d'un barreau de silicium polycristallin, une brèche (120) est formée dans le filament (116) sur lequel sera déposé le silicium pour former un barreau. Cette brèche (120) confère au barreau ainsi obtenu un plan de clivage (122) qui permet à ce dernier de se casser de façon contrôlée à l'endroit souhaité. Cette brèche (120) peut être formée à l'endroit choisi pour que la rupture au niveau du plan de clivage (122) permette d'obtenir de longs barreaux. Ceci permet d'améliorer le rendement du procédé de croissance de barreaux. Cette brèche (120) permet également de réduire au minimum les pertes de longueurs de barreaux utilisables dues à l'écaillage.</description><edition>7</edition><language>eng ; fre</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030612&DB=EPODOC&CC=WO&NR=03048410A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030612&DB=EPODOC&CC=WO&NR=03048410A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KECK, DAVID</creatorcontrib><creatorcontrib>OSBORNE, EDWARD, W</creatorcontrib><creatorcontrib>KAMRUD, HALVOR</creatorcontrib><title>METHOD FOR INDUCING CONTROLLED CLEAVAGE OF POLYRYSTALLINE SILICON ROD</title><description>To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw (120) is induced in a filament (116) on which silicon will be deposited to produce a rod. The flaw (120) causes the grown rod to have a cleavage plane (122) such that the rod will break in a controlled manner at a desired location. The flaw (120) can be placed at a location selected such that reakage at the cleavage plane (122) will produce long rods and thereby improve the yield of the rod growing process. Such a flaw (120) will also have the effect of minimizing unseable rod length losses due to spalling.
Pour parer aux problèmes liés à la formation de fissures et à l'écaillage non souhaités au cours de la croissance d'un barreau de silicium polycristallin, une brèche (120) est formée dans le filament (116) sur lequel sera déposé le silicium pour former un barreau. Cette brèche (120) confère au barreau ainsi obtenu un plan de clivage (122) qui permet à ce dernier de se casser de façon contrôlée à l'endroit souhaité. Cette brèche (120) peut être formée à l'endroit choisi pour que la rupture au niveau du plan de clivage (122) permette d'obtenir de longs barreaux. Ceci permet d'améliorer le rendement du procédé de croissance de barreaux. Cette brèche (120) permet également de réduire au minimum les pertes de longueurs de barreaux utilisables dues à l'écaillage.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD1dQ3x8HdRcPMPUvD0cwl19vRzV3D29wsJ8vfxcXVRcPZxdQxzdHdV8HdTCPD3iQyKDA5x9PHx9HNVCPb08QSqVAjyd-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHh_gbGBiYWJoYGjobGxKgBAJQKLD0</recordid><startdate>20030612</startdate><enddate>20030612</enddate><creator>KECK, DAVID</creator><creator>OSBORNE, EDWARD, W</creator><creator>KAMRUD, HALVOR</creator><scope>EVB</scope></search><sort><creationdate>20030612</creationdate><title>METHOD FOR INDUCING CONTROLLED CLEAVAGE OF POLYRYSTALLINE SILICON ROD</title><author>KECK, DAVID ; OSBORNE, EDWARD, W ; KAMRUD, HALVOR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO03048410A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2003</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KECK, DAVID</creatorcontrib><creatorcontrib>OSBORNE, EDWARD, W</creatorcontrib><creatorcontrib>KAMRUD, HALVOR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KECK, DAVID</au><au>OSBORNE, EDWARD, W</au><au>KAMRUD, HALVOR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR INDUCING CONTROLLED CLEAVAGE OF POLYRYSTALLINE SILICON ROD</title><date>2003-06-12</date><risdate>2003</risdate><abstract>To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw (120) is induced in a filament (116) on which silicon will be deposited to produce a rod. The flaw (120) causes the grown rod to have a cleavage plane (122) such that the rod will break in a controlled manner at a desired location. The flaw (120) can be placed at a location selected such that reakage at the cleavage plane (122) will produce long rods and thereby improve the yield of the rod growing process. Such a flaw (120) will also have the effect of minimizing unseable rod length losses due to spalling.
Pour parer aux problèmes liés à la formation de fissures et à l'écaillage non souhaités au cours de la croissance d'un barreau de silicium polycristallin, une brèche (120) est formée dans le filament (116) sur lequel sera déposé le silicium pour former un barreau. Cette brèche (120) confère au barreau ainsi obtenu un plan de clivage (122) qui permet à ce dernier de se casser de façon contrôlée à l'endroit souhaité. Cette brèche (120) peut être formée à l'endroit choisi pour que la rupture au niveau du plan de clivage (122) permette d'obtenir de longs barreaux. Ceci permet d'améliorer le rendement du procédé de croissance de barreaux. Cette brèche (120) permet également de réduire au minimum les pertes de longueurs de barreaux utilisables dues à l'écaillage.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD FOR INDUCING CONTROLLED CLEAVAGE OF POLYRYSTALLINE SILICON ROD |
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