SELF-ALIGNED MAGNETIC CLAD WRITE LINE AND METHOD THEREOF

A self-aligned magnetic clad bit line structure (274) for a magnetoresistive memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (250), magnetic cladding side...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BARRON, CAROLE, C, MELNICH, BRADLEY, M, JONES, ROBERT, E, LUCKOWSKI, ERIC, D
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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