ASSEMBLY COMPRISING HEAT DISTRIBUTING PLATE AND EDGE SUPPORT

A substrate processing assembly includes an edge support 320 and a heat distributing plate 340 to absorb and transfer heat energy via radiation from a radiant heat source 380 to a substrate 302 on the edge support. The edge support defines a substrate support location to support a substrate at an ed...

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1. Verfasser:	CHACIN, JUAN, M
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	CHACIN, JUAN, M
description	A substrate processing assembly includes an edge support 320 and a heat distributing plate 340 to absorb and transfer heat energy via radiation from a radiant heat source 380 to a substrate 302 on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms 350 is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced part from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support. In yet another embodiment, the substrate processing assembly can be used in a substrate processing apparatus that includes a chamber within which the assembly is located and a radiant heat source to provide radiant heat to the chamber. The structure of the processing assembly provides substrate processing assembly components that have a low thermal mass such that the temperature of the chamber can be quickly ramped up to operating temperature, thus significantly decreasing the time to process a substrate such as a semiconductor wafer. L'invention porte sur un ensemble de traitement de substrat comprenant un support de contour et une plaque de diffusion de chaleur permettant l'absorption et le transfert de l'énergie calorifique par rayonnement d'une source de chaleur radiante à un substrat sur le support de contour. Le support de contour forme un emplacement pour supporter un substrat au niveau d'un bord du substrat pendant le traitement. L'ensemble comprend également une première plaque de diffusion de chaleur généralement parallèle au support de contour. Une pluralité de bras supports de contour sont couplés au support de contour lui-même et à la première plaque de diffusion de chaleur de façon à maintenir celle-ci à l'écart du support de contour. Selon une autre réalisation, l'ensemble peut comprendre une seconde plaque de diffusion de chaleur pouvant être utilisée dans un appareil de traitement de substrat comprenant une chambre dans laquelle est placé l'ensemble et une source de chaleur radiante de façon à générer une chaleur radiante vers la chambre. La structure de l'ensemble de traitement est constituée de composants qui ont une faible masse ther
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO02093623A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO02093623A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO02093623A33</originalsourceid><addsrcrecordid>eNrjZLBxDA529XXyiVRw9vcNCPIM9vRzV_BwdQxRcPEMDgnydAoNAYkE-DiGuCo4-rkouLq4uyoEhwYE-AeF8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-HB_AyMDS2MzI2NHY2Ni1AAAHhkp1Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ASSEMBLY COMPRISING HEAT DISTRIBUTING PLATE AND EDGE SUPPORT</title><source>esp@cenet</source><creator>CHACIN, JUAN, M</creator><creatorcontrib>CHACIN, JUAN, M</creatorcontrib><description>A substrate processing assembly includes an edge support 320 and a heat distributing plate 340 to absorb and transfer heat energy via radiation from a radiant heat source 380 to a substrate 302 on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms 350 is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced part from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support. In yet another embodiment, the substrate processing assembly can be used in a substrate processing apparatus that includes a chamber within which the assembly is located and a radiant heat source to provide radiant heat to the chamber. The structure of the processing assembly provides substrate processing assembly components that have a low thermal mass such that the temperature of the chamber can be quickly ramped up to operating temperature, thus significantly decreasing the time to process a substrate such as a semiconductor wafer. L'invention porte sur un ensemble de traitement de substrat comprenant un support de contour et une plaque de diffusion de chaleur permettant l'absorption et le transfert de l'énergie calorifique par rayonnement d'une source de chaleur radiante à un substrat sur le support de contour. Le support de contour forme un emplacement pour supporter un substrat au niveau d'un bord du substrat pendant le traitement. L'ensemble comprend également une première plaque de diffusion de chaleur généralement parallèle au support de contour. Une pluralité de bras supports de contour sont couplés au support de contour lui-même et à la première plaque de diffusion de chaleur de façon à maintenir celle-ci à l'écart du support de contour. Selon une autre réalisation, l'ensemble peut comprendre une seconde plaque de diffusion de chaleur pouvant être utilisée dans un appareil de traitement de substrat comprenant une chambre dans laquelle est placé l'ensemble et une source de chaleur radiante de façon à générer une chaleur radiante vers la chambre. La structure de l'ensemble de traitement est constituée de composants qui ont une faible masse thermique de sorte que la température de la chambre puisse s'élever rapidement à une température de fonctionnement, ce qui réduit considérablement le temps de traitement du substrat tel qu'une plaquette à semi-conducteurs.</description><edition>7</edition><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030724&DB=EPODOC&CC=WO&NR=02093623A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030724&DB=EPODOC&CC=WO&NR=02093623A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHACIN, JUAN, M</creatorcontrib><title>ASSEMBLY COMPRISING HEAT DISTRIBUTING PLATE AND EDGE SUPPORT</title><description>A substrate processing assembly includes an edge support 320 and a heat distributing plate 340 to absorb and transfer heat energy via radiation from a radiant heat source 380 to a substrate 302 on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms 350 is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced part from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support. In yet another embodiment, the substrate processing assembly can be used in a substrate processing apparatus that includes a chamber within which the assembly is located and a radiant heat source to provide radiant heat to the chamber. The structure of the processing assembly provides substrate processing assembly components that have a low thermal mass such that the temperature of the chamber can be quickly ramped up to operating temperature, thus significantly decreasing the time to process a substrate such as a semiconductor wafer. L'invention porte sur un ensemble de traitement de substrat comprenant un support de contour et une plaque de diffusion de chaleur permettant l'absorption et le transfert de l'énergie calorifique par rayonnement d'une source de chaleur radiante à un substrat sur le support de contour. Le support de contour forme un emplacement pour supporter un substrat au niveau d'un bord du substrat pendant le traitement. L'ensemble comprend également une première plaque de diffusion de chaleur généralement parallèle au support de contour. Une pluralité de bras supports de contour sont couplés au support de contour lui-même et à la première plaque de diffusion de chaleur de façon à maintenir celle-ci à l'écart du support de contour. Selon une autre réalisation, l'ensemble peut comprendre une seconde plaque de diffusion de chaleur pouvant être utilisée dans un appareil de traitement de substrat comprenant une chambre dans laquelle est placé l'ensemble et une source de chaleur radiante de façon à générer une chaleur radiante vers la chambre. La structure de l'ensemble de traitement est constituée de composants qui ont une faible masse thermique de sorte que la température de la chambre puisse s'élever rapidement à une température de fonctionnement, ce qui réduit considérablement le temps de traitement du substrat tel qu'une plaquette à semi-conducteurs.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBxDA529XXyiVRw9vcNCPIM9vRzV_BwdQxRcPEMDgnydAoNAYkE-DiGuCo4-rkouLq4uyoEhwYE-AeF8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-HB_AyMDS2MzI2NHY2Ni1AAAHhkp1Q</recordid><startdate>20030724</startdate><enddate>20030724</enddate><creator>CHACIN, JUAN, M</creator><scope>EVB</scope></search><sort><creationdate>20030724</creationdate><title>ASSEMBLY COMPRISING HEAT DISTRIBUTING PLATE AND EDGE SUPPORT</title><author>CHACIN, JUAN, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO02093623A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2003</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>CHACIN, JUAN, M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHACIN, JUAN, M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ASSEMBLY COMPRISING HEAT DISTRIBUTING PLATE AND EDGE SUPPORT</title><date>2003-07-24</date><risdate>2003</risdate><abstract>A substrate processing assembly includes an edge support 320 and a heat distributing plate 340 to absorb and transfer heat energy via radiation from a radiant heat source 380 to a substrate 302 on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms 350 is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced part from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support. In yet another embodiment, the substrate processing assembly can be used in a substrate processing apparatus that includes a chamber within which the assembly is located and a radiant heat source to provide radiant heat to the chamber. The structure of the processing assembly provides substrate processing assembly components that have a low thermal mass such that the temperature of the chamber can be quickly ramped up to operating temperature, thus significantly decreasing the time to process a substrate such as a semiconductor wafer. L'invention porte sur un ensemble de traitement de substrat comprenant un support de contour et une plaque de diffusion de chaleur permettant l'absorption et le transfert de l'énergie calorifique par rayonnement d'une source de chaleur radiante à un substrat sur le support de contour. Le support de contour forme un emplacement pour supporter un substrat au niveau d'un bord du substrat pendant le traitement. L'ensemble comprend également une première plaque de diffusion de chaleur généralement parallèle au support de contour. Une pluralité de bras supports de contour sont couplés au support de contour lui-même et à la première plaque de diffusion de chaleur de façon à maintenir celle-ci à l'écart du support de contour. Selon une autre réalisation, l'ensemble peut comprendre une seconde plaque de diffusion de chaleur pouvant être utilisée dans un appareil de traitement de substrat comprenant une chambre dans laquelle est placé l'ensemble et une source de chaleur radiante de façon à générer une chaleur radiante vers la chambre. La structure de l'ensemble de traitement est constituée de composants qui ont une faible masse thermique de sorte que la température de la chambre puisse s'élever rapidement à une température de fonctionnement, ce qui réduit considérablement le temps de traitement du substrat tel qu'une plaquette à semi-conducteurs.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	ASSEMBLY COMPRISING HEAT DISTRIBUTING PLATE AND EDGE SUPPORT
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T13%3A10%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHACIN,%20JUAN,%20M&rft.date=2003-07-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO02093623A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true