MIXED-SIGNAL SEMICONDUCTOR STRUCTURE
Mixed-signal devices (300) are formed using high quality epitaxial layers of monocrystalline materials grown overlying a monocrystalline substrate such as a large silicon wafer (302), using an accommodating buffer layer (304). The accommodating buffer layer (304) is a layer of monocrystalline oxide...
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| creator | WARBLE, KEITH, V EMRICK, RUDY, M |
| description | Mixed-signal devices (300) are formed using high quality epitaxial layers of monocrystalline materials grown overlying a monocrystalline substrate such as a large silicon wafer (302), using an accommodating buffer layer (304). The accommodating buffer layer (304) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide or an amorphous layer formed from a monocrystalline precursor. The device (300) includes passive components (314) formed away from the substrate (302), to minimize adverse signal interaction between passive component (314) signals and the substrate (302).
L'invention concerne des dispositifs de signaux mixtes (300) formés au moyen de couches épitaxiales de haute qualité de matières monocristallines croissant sur un substrat monocristallin, tel qu'une grande plaquette de silicium (302), à l'aide d'une couche tampon de logement (304). Cette couche (304) est une couche d'oxyde monocristallin séparée de la plaquette de silicium par une couche d'interface amorphe d'oxyde de silicium ou par une couche amorphe formée à partir d'un précurseur monocristallin. Ce dispositif (300) comporte des composants passifs (314) élaborés à distance du substrat (302), de manière à minimiser l'interaction inverse de signaux entre des signaux du composant passif (314) et le substrat (302). |
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L'invention concerne des dispositifs de signaux mixtes (300) formés au moyen de couches épitaxiales de haute qualité de matières monocristallines croissant sur un substrat monocristallin, tel qu'une grande plaquette de silicium (302), à l'aide d'une couche tampon de logement (304). Cette couche (304) est une couche d'oxyde monocristallin séparée de la plaquette de silicium par une couche d'interface amorphe d'oxyde de silicium ou par une couche amorphe formée à partir d'un précurseur monocristallin. Ce dispositif (300) comporte des composants passifs (314) élaborés à distance du substrat (302), de manière à minimiser l'interaction inverse de signaux entre des signaux du composant passif (314) et le substrat (302).</description><edition>7</edition><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021031&DB=EPODOC&CC=WO&NR=02086952A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021031&DB=EPODOC&CC=WO&NR=02086952A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WARBLE, KEITH, V</creatorcontrib><creatorcontrib>EMRICK, RUDY, M</creatorcontrib><title>MIXED-SIGNAL SEMICONDUCTOR STRUCTURE</title><description>Mixed-signal devices (300) are formed using high quality epitaxial layers of monocrystalline materials grown overlying a monocrystalline substrate such as a large silicon wafer (302), using an accommodating buffer layer (304). The accommodating buffer layer (304) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide or an amorphous layer formed from a monocrystalline precursor. The device (300) includes passive components (314) formed away from the substrate (302), to minimize adverse signal interaction between passive component (314) signals and the substrate (302).
L'invention concerne des dispositifs de signaux mixtes (300) formés au moyen de couches épitaxiales de haute qualité de matières monocristallines croissant sur un substrat monocristallin, tel qu'une grande plaquette de silicium (302), à l'aide d'une couche tampon de logement (304). Cette couche (304) est une couche d'oxyde monocristallin séparée de la plaquette de silicium par une couche d'interface amorphe d'oxyde de silicium ou par une couche amorphe formée à partir d'un précurseur monocristallin. Ce dispositif (300) comporte des composants passifs (314) élaborés à distance du substrat (302), de manière à minimiser l'interaction inverse de signaux entre des signaux du composant passif (314) et le substrat (302).</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDx9YxwddEN9nT3c_RRCHb19XT293MJdQ7xD1IIDgkCMkKDXHkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXy4v4GRgYWZpamRo6ExMWoAptgjiQ</recordid><startdate>20021031</startdate><enddate>20021031</enddate><creator>WARBLE, KEITH, V</creator><creator>EMRICK, RUDY, M</creator><scope>EVB</scope></search><sort><creationdate>20021031</creationdate><title>MIXED-SIGNAL SEMICONDUCTOR STRUCTURE</title><author>WARBLE, KEITH, V ; EMRICK, RUDY, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO02086952A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2002</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>WARBLE, KEITH, V</creatorcontrib><creatorcontrib>EMRICK, RUDY, M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WARBLE, KEITH, V</au><au>EMRICK, RUDY, M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MIXED-SIGNAL SEMICONDUCTOR STRUCTURE</title><date>2002-10-31</date><risdate>2002</risdate><abstract>Mixed-signal devices (300) are formed using high quality epitaxial layers of monocrystalline materials grown overlying a monocrystalline substrate such as a large silicon wafer (302), using an accommodating buffer layer (304). The accommodating buffer layer (304) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide or an amorphous layer formed from a monocrystalline precursor. The device (300) includes passive components (314) formed away from the substrate (302), to minimize adverse signal interaction between passive component (314) signals and the substrate (302).
L'invention concerne des dispositifs de signaux mixtes (300) formés au moyen de couches épitaxiales de haute qualité de matières monocristallines croissant sur un substrat monocristallin, tel qu'une grande plaquette de silicium (302), à l'aide d'une couche tampon de logement (304). Cette couche (304) est une couche d'oxyde monocristallin séparée de la plaquette de silicium par une couche d'interface amorphe d'oxyde de silicium ou par une couche amorphe formée à partir d'un précurseur monocristallin. Ce dispositif (300) comporte des composants passifs (314) élaborés à distance du substrat (302), de manière à minimiser l'interaction inverse de signaux entre des signaux du composant passif (314) et le substrat (302).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | MIXED-SIGNAL SEMICONDUCTOR STRUCTURE |
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