METHOD FOR THE PRODUCTION OF ONE-DIMENSIONAL NANOSTRUCTURES AND NANOSTRUCTURES OBTAINED ACCORDING TO SAID METHOD

According to the invention, parallel atomic lines (4) are formed on the surface of a silicon carbide substrate (2) and a material which can be selectively absorbed between the atomic lines without being absorbed on said atomic lines, is deposited on the surface, whereupon strips (6,8) of said materi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SOUKIASSIAN, PATRICK, D'ANGELO, MARIE, ARISTOV, VICTOR, DERYCKE, VINCENT, SEMOND, FABRICE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH MANUFACTURE OR TREATMENT THEREOF METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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