METHOD FOR THE PRODUCTION OF ONE-DIMENSIONAL NANOSTRUCTURES AND NANOSTRUCTURES OBTAINED ACCORDING TO SAID METHOD

According to the invention, parallel atomic lines (4) are formed on the surface of a silicon carbide substrate (2) and a material which can be selectively absorbed between the atomic lines without being absorbed on said atomic lines, is deposited on the surface, whereupon strips (6,8) of said materi...

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Bibliographische Detailangaben
Hauptverfasser:	SOUKIASSIAN, PATRICK, D'ANGELO, MARIE, ARISTOV, VICTOR, DERYCKE, VINCENT, SEMOND, FABRICE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH MANUFACTURE OR TREATMENT THEREOF METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	According to the invention, parallel atomic lines (4) are formed on the surface of a silicon carbide substrate (2) and a material which can be selectively absorbed between the atomic lines without being absorbed on said atomic lines, is deposited on the surface, whereupon strips (6,8) of said material are created between said atomic lines. The invention is particularly suitable for use in the production of nanostructures having passivated or metallized strips. Procédé de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procédé. Selon l'invention, on forme des lignes atomiques parallèles (4), à la surface d'un substrat (2) de carbure de silicium, et on dépose sur cette surface une matière capable d'être adsorbée de façon sélective entre les lignes atomiques, sans l'être sur ces lignes atomiques, le dépôt de cette matière engendrant ainsi, entre les lignes atomiques, des bandes (6, 8) de cette matière. L'invention s'applique notamment à la fabrication de nanostructures possédant des bandes passivées ou métallisées.