Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same
There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic...
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| creator | Lee, Jin Hyun Cho, Myong Soo Choi, Pun Jae Park, Ki Yeol |
| description | There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer. |
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A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BLASTING ; COMBUSTION ENGINES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; HEATING ; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS ; LIGHTING ; MECHANICAL ENGINEERING ; SEMICONDUCTOR DEVICES ; SUPPLYING COMBUSTION ENGINES IN GENERAL, WITH COMBUSTIBLEMIXTURES OR CONSTITUENTS THEREOF ; WEAPONS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190604&DB=EPODOC&CC=US&NR=RE47417E$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190604&DB=EPODOC&CC=US&NR=RE47417E$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lee, Jin Hyun</creatorcontrib><creatorcontrib>Cho, Myong Soo</creatorcontrib><creatorcontrib>Choi, Pun Jae</creatorcontrib><creatorcontrib>Park, Ki Yeol</creatorcontrib><title>Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same</title><description>There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BLASTING</subject><subject>COMBUSTION ENGINES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>HEATING</subject><subject>HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SUPPLYING COMBUSTION ENGINES IN GENERAL, WITH COMBUSTIBLEMIXTURES OR CONSTITUENTS THEREOF</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDsOwjAQRN1QoMAd9gCkQETKAZARNYE6Wtnrj4jtKF5zA-6NkSjooBpp5r1Zi-dAwasUdVGcFpi8dQy1YvbRgqaHV7SDQOyShmQgYCwGFZflvbMjyBgqgVFD_n0FM6o7WoKSv_2NWBmcMm0_2Qg4yevx3NKcRspVokg83oaL7Ppu30t5-AN5AYvuS6s</recordid><startdate>20190604</startdate><enddate>20190604</enddate><creator>Lee, Jin Hyun</creator><creator>Cho, Myong Soo</creator><creator>Choi, Pun Jae</creator><creator>Park, Ki Yeol</creator><scope>EVB</scope></search><sort><creationdate>20190604</creationdate><title>Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same</title><author>Lee, Jin Hyun ; Cho, Myong Soo ; Choi, Pun Jae ; Park, Ki Yeol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_USRE47417EE3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BLASTING</topic><topic>COMBUSTION ENGINES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>HEATING</topic><topic>HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SUPPLYING COMBUSTION ENGINES IN GENERAL, WITH COMBUSTIBLEMIXTURES OR CONSTITUENTS THEREOF</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Jin Hyun</creatorcontrib><creatorcontrib>Cho, Myong Soo</creatorcontrib><creatorcontrib>Choi, Pun Jae</creatorcontrib><creatorcontrib>Park, Ki Yeol</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Jin Hyun</au><au>Cho, Myong Soo</au><au>Choi, Pun Jae</au><au>Park, Ki Yeol</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same</title><date>2019-06-04</date><risdate>2019</risdate><abstract>There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS BLASTING COMBUSTION ENGINES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEATING HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS LIGHTING MECHANICAL ENGINEERING SEMICONDUCTOR DEVICES SUPPLYING COMBUSTION ENGINES IN GENERAL, WITH COMBUSTIBLEMIXTURES OR CONSTITUENTS THEREOF WEAPONS |
| title | Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same |
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