Method for precision integrated circuit die singulation using differential etch rates

A preprocessed semiconductor substrate such as a wafer is provided with a metal etch mask which defines singulation channels on the substrate surface. An isotropic etch process is used to define a singulation channel with a first depth extending into the semiconductor substrate material. A second an...

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Bibliographische Detailangaben

Hauptverfasser:	BOYD W. ERIC, CLARK STEWART, LUDWIG DAVID, YAMAGUCHI JAMES
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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