Capping layer for EUV optical elements
Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. The final pe...
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| creator | VISSER HUGO M SINGH MANDEEP |
| description | Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. The final period of a multilayer coating may also be modified to provide improved protective characteristics. |
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The final period of a multilayer coating may also be modified to provide improved protective characteristics.</description><language>eng</language><subject>ACCESSORIES THEREFOR ; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES ; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM ; APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GAMMA RAY OR X-RAY MICROSCOPES ; GLASS ; HOLOGRAPHY ; IRRADIATION DEVICES ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; MATERIALS THEREFOR ; METALLURGY ; MINERAL OR SLAG WOOL ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110510&DB=EPODOC&CC=US&NR=RE42338E$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110510&DB=EPODOC&CC=US&NR=RE42338E$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VISSER HUGO M</creatorcontrib><creatorcontrib>SINGH MANDEEP</creatorcontrib><title>Capping layer for EUV optical elements</title><description>Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. 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The final period of a multilayer coating may also be modified to provide improved protective characteristics.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES GLASS HOLOGRAPHY IRRADIATION DEVICES JOINING GLASS TO GLASS OR OTHER MATERIALS MATERIALS THEREFOR METALLURGY MINERAL OR SLAG WOOL NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR |
| title | Capping layer for EUV optical elements |
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