Method of fabricating Group III-V compound semiconductor devices using selective etching
A solution of hydrogen peroxide [H2O2], citric acid [HOC(CH2COOH)2COOH.H2O], and a salt of citric acid such as potassium citrate [HOC(CH2COOK)2COOK.H2O], and hydrogen peroxide [H2O2], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V...
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| creator | BRUNEMEIER PAUL E ROSENBLATT DANIEL H STRIFLER WALTER A SCHMUKLER BRUCE C REMBA RONALD E |
| description | A solution of hydrogen peroxide [H2O2], citric acid [HOC(CH2COOH)2COOH.H2O], and a salt of citric acid such as potassium citrate [HOC(CH2COOK)2COOK.H2O], and hydrogen peroxide [H2O2], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, AlyGa1-yAs is selectively etched in the presence of AlxGa1-xAs (0 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_USRE36185EE</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>USRE36185EE</sourcerecordid><originalsourceid>FETCH-epo_espacenet_USRE36185EE3</originalsourceid><addsrcrecordid>eNqNi00KwjAUBrtxIeod3gW6kKK4l1S7cOMf7kp8-WIDbV5okp5fBQ_gamCYmRePE1InhsSS1c_RsU7Ov-gwSg7UNE15J5YhSPaGIgbH4k3mJCMZTI4RKcfvENGDk5tASNx9zLKYWd1HrH5cFFSr6_5YIkiLGDTDI7W3y1lV2_Vuo1T1R_IGGeg6hw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of fabricating Group III-V compound semiconductor devices using selective etching</title><source>esp@cenet</source><creator>BRUNEMEIER; PAUL E ; ROSENBLATT; DANIEL H ; STRIFLER; WALTER A ; SCHMUKLER; BRUCE C ; REMBA; RONALD E</creator><creatorcontrib>BRUNEMEIER; PAUL E ; ROSENBLATT; DANIEL H ; STRIFLER; WALTER A ; SCHMUKLER; BRUCE C ; REMBA; RONALD E</creatorcontrib><description>A solution of hydrogen peroxide [H2O2], citric acid [HOC(CH2COOH)2COOH.H2O], and a salt of citric acid such as potassium citrate [HOC(CH2COOK)2COOK.H2O], and hydrogen peroxide [H2O2], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, AlyGa1-yAs is selectively etched in the presence of AlxGa1-xAs (0</=y<0.2 & x>0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (Idss) and threshold voltage (Vth) uniformity.</description><edition>6</edition><language>eng</language><subject>ADHESIVES ; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NATURAL RESINS ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PAINTS ; POLISHES ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990406&DB=EPODOC&CC=US&NR=RE36185E$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990406&DB=EPODOC&CC=US&NR=RE36185E$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BRUNEMEIER; PAUL E</creatorcontrib><creatorcontrib>ROSENBLATT; DANIEL H</creatorcontrib><creatorcontrib>STRIFLER; WALTER A</creatorcontrib><creatorcontrib>SCHMUKLER; BRUCE C</creatorcontrib><creatorcontrib>REMBA; RONALD E</creatorcontrib><title>Method of fabricating Group III-V compound semiconductor devices using selective etching</title><description>A solution of hydrogen peroxide [H2O2], citric acid [HOC(CH2COOH)2COOH.H2O], and a salt of citric acid such as potassium citrate [HOC(CH2COOK)2COOK.H2O], and hydrogen peroxide [H2O2], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, AlyGa1-yAs is selectively etched in the presence of AlxGa1-xAs (0</=y<0.2 & x>0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (Idss) and threshold voltage (Vth) uniformity.</description><subject>ADHESIVES</subject><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NATURAL RESINS</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi00KwjAUBrtxIeod3gW6kKK4l1S7cOMf7kp8-WIDbV5okp5fBQ_gamCYmRePE1InhsSS1c_RsU7Ov-gwSg7UNE15J5YhSPaGIgbH4k3mJCMZTI4RKcfvENGDk5tASNx9zLKYWd1HrH5cFFSr6_5YIkiLGDTDI7W3y1lV2_Vuo1T1R_IGGeg6hw</recordid><startdate>19990406</startdate><enddate>19990406</enddate><creator>BRUNEMEIER; PAUL E</creator><creator>ROSENBLATT; DANIEL H</creator><creator>STRIFLER; WALTER A</creator><creator>SCHMUKLER; BRUCE C</creator><creator>REMBA; RONALD E</creator><scope>EVB</scope></search><sort><creationdate>19990406</creationdate><title>Method of fabricating Group III-V compound semiconductor devices using selective etching</title><author>BRUNEMEIER; PAUL E ; ROSENBLATT; DANIEL H ; STRIFLER; WALTER A ; SCHMUKLER; BRUCE C ; REMBA; RONALD E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_USRE36185EE3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>ADHESIVES</topic><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NATURAL RESINS</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>BRUNEMEIER; PAUL E</creatorcontrib><creatorcontrib>ROSENBLATT; DANIEL H</creatorcontrib><creatorcontrib>STRIFLER; WALTER A</creatorcontrib><creatorcontrib>SCHMUKLER; BRUCE C</creatorcontrib><creatorcontrib>REMBA; RONALD E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BRUNEMEIER; PAUL E</au><au>ROSENBLATT; DANIEL H</au><au>STRIFLER; WALTER A</au><au>SCHMUKLER; BRUCE C</au><au>REMBA; RONALD E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of fabricating Group III-V compound semiconductor devices using selective etching</title><date>1999-04-06</date><risdate>1999</risdate><abstract>A solution of hydrogen peroxide [H2O2], citric acid [HOC(CH2COOH)2COOH.H2O], and a salt of citric acid such as potassium citrate [HOC(CH2COOK)2COOK.H2O], and hydrogen peroxide [H2O2], in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, AlyGa1-yAs is selectively etched in the presence of AlxGa1-xAs (0</=y<0.2 & x>0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (Idss) and threshold voltage (Vth) uniformity.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method of fabricating Group III-V compound semiconductor devices using selective etching |
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