FinFET with high mobility and strain channel

FinFET with high mobility and strain channel

An integrated circuit device includes a fin having a gate area beneath a gate electrode structure, a source/drain region disposed beyond ends of the fin, and a first conformal layer formed around an embedded portion of the source/drain region. A vertical sidewall of the first conformal layer is orie...

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Hauptverfasser: Ting, Kuo-Chiang, Lai, Kao-Ting, Li, Hou-Ju, Wu, Chi-Hsi
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Ting, Kuo-Chiang
Lai, Kao-Ting
Li, Hou-Ju
Wu, Chi-Hsi
description An integrated circuit device includes a fin having a gate area beneath a gate electrode structure, a source/drain region disposed beyond ends of the fin, and a first conformal layer formed around an embedded portion of the source/drain region. A vertical sidewall of the first conformal layer is oriented parallel to the gate area.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FinFET with high mobility and strain channel
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