Semiconductor device and power amplifier circuit
A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a...
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| creator | Obu, Isao Yoshida, Shigeru Ideno, Kaoru |
| description | A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9997516B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9997516B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9997516B23</originalsourceid><addsrcrecordid>eNrjZDAITs3NTM7PSylNLskvUkhJLctMTlVIzEtRKMgvTy1SSMwtyMlMywSykjOLkkszS3gYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosKWlpbmpoZmTkTERSgA2sCuA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and power amplifier circuit</title><source>esp@cenet</source><creator>Obu, Isao ; Yoshida, Shigeru ; Ideno, Kaoru</creator><creatorcontrib>Obu, Isao ; Yoshida, Shigeru ; Ideno, Kaoru</creatorcontrib><description>A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.</description><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180612&DB=EPODOC&CC=US&NR=9997516B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180612&DB=EPODOC&CC=US&NR=9997516B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Obu, Isao</creatorcontrib><creatorcontrib>Yoshida, Shigeru</creatorcontrib><creatorcontrib>Ideno, Kaoru</creatorcontrib><title>Semiconductor device and power amplifier circuit</title><description>A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAITs3NTM7PSylNLskvUkhJLctMTlVIzEtRKMgvTy1SSMwtyMlMywSykjOLkkszS3gYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosKWlpbmpoZmTkTERSgA2sCuA</recordid><startdate>20180612</startdate><enddate>20180612</enddate><creator>Obu, Isao</creator><creator>Yoshida, Shigeru</creator><creator>Ideno, Kaoru</creator><scope>EVB</scope></search><sort><creationdate>20180612</creationdate><title>Semiconductor device and power amplifier circuit</title><author>Obu, Isao ; Yoshida, Shigeru ; Ideno, Kaoru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9997516B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Obu, Isao</creatorcontrib><creatorcontrib>Yoshida, Shigeru</creatorcontrib><creatorcontrib>Ideno, Kaoru</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Obu, Isao</au><au>Yoshida, Shigeru</au><au>Ideno, Kaoru</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and power amplifier circuit</title><date>2018-06-12</date><risdate>2018</risdate><abstract>A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device and power amplifier circuit |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T14%3A30%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Obu,%20Isao&rft.date=2018-06-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9997516B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |