Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices

Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input si...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	McCann, Damian
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY WIRELESS COMMUNICATIONS NETWORKS
Online-Zugang:	Volltext bestellen
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