Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices

Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input si...

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1. Verfasser:	McCann, Damian
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY WIRELESS COMMUNICATIONS NETWORKS
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creator	McCann, Damian
description	Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.
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The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.</description><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRICITY ; WIRELESS COMMUNICATIONS NETWORKS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180515&DB=EPODOC&CC=US&NR=9974038B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180515&DB=EPODOC&CC=US&NR=9974038B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>McCann, Damian</creatorcontrib><title>Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices</title><description>Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRICITY</subject><subject>WIRELESS COMMUNICATIONS NETWORKS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEKwkAQRuE0FqLeYS4giBE0bYJir9Zh3P2TLCQ7y8xG8PaCeACrV3xvWfgmqJtDNuLoSRKUc4g9TciDeKM8QCEddaLkRBXuy2lgA0FV1MjxbPD0fFPP4xjmiWLIGjzI4xUcbF0sOh4Nm19XBV3O9-a6RZIWltghIrePW1UdD7vyVO_LP5YPq1I_Ig</recordid><startdate>20180515</startdate><enddate>20180515</enddate><creator>McCann, Damian</creator><scope>EVB</scope></search><sort><creationdate>20180515</creationdate><title>Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices</title><author>McCann, Damian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9974038B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRICITY</topic><topic>WIRELESS COMMUNICATIONS NETWORKS</topic><toplevel>online_resources</toplevel><creatorcontrib>McCann, Damian</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>McCann, Damian</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices</title><date>2018-05-15</date><risdate>2018</risdate><abstract>Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.</abstract><oa>free_for_read</oa></addata></record>
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subjects	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY WIRELESS COMMUNICATIONS NETWORKS
title	Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices
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