Fast switching IGBT with embedded emitter shorting contacts and method for making same

Fast switching IGBT with embedded emitter shorting contacts and method for making same

Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.

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Hauptverfasser: Korec Jacek, Neilson John Manning Savidge, Pendharkar Sameer
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Korec Jacek
Neilson John Manning Savidge
Pendharkar Sameer
description Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Fast switching IGBT with embedded emitter shorting contacts and method for making same
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