Method for fabricating LDMOS with reduced source region

A method for fabricating a semiconductor device including: forming a block layer above a well region of a first doping type in a semiconductor substrate, wherein the block layer has an opening for defining a first region in an upper part of the well region and has sidewalls at sides of the opening;...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	McGregor Joel M, Yoo Ji-Hyoung, Braun Eric K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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