Memory device with manufacturable cylindrical storage node

A high capacitance embedded capacitor and associated fabrication processes are disclosed for fabricating a capacitor stack in a multi-layer stack to include a first capacitor plate conductor formed with a cylinder-shaped storage node electrode formed in the multi-layer stack, a capacitor dielectric...

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Bibliographische Detailangaben
1. Verfasser:	Rhie Hyoung Seub
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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