Thin film transistor substrate and method for manufacturing the same
A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electr...
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| creator | Konomi Takaharu Tsumura Naoki Inoue Kazunori Nagayama Kensuke |
| description | A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Thin film transistor substrate and method for manufacturing the same |
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