Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins

At least one method, apparatus and system disclosed involves forming a finFET device having silicon and silicon germanium fins. The method includes: forming an n-doped and a p-doped region in a semiconductor wafer; forming a layer of silicon above both the those regions; removing a portion of the si...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Brunco David Paul
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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