Ternary content addressable memory (TCAM) for multi bit miss detect circuit

Ternary content addressable memory (TCAM) for multi bit miss detect circuit

The present disclosure relates to a pre-charge circuit including a first inverter which receives an early pre-charge signal and outputs an inverted early pre-charge signal, a first gate which receives a late pre-charge signal and a match line output signal and outputs an AND output signal, and a sec...

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Hauptverfasser: Arsovski Igor, Butler Van D, Fragano Michael T, Houle Robert M, Patil Akhilesh
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Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Arsovski Igor
Butler Van D
Fragano Michael T
Houle Robert M
Patil Akhilesh
description The present disclosure relates to a pre-charge circuit including a first inverter which receives an early pre-charge signal and outputs an inverted early pre-charge signal, a first gate which receives a late pre-charge signal and a match line output signal and outputs an AND output signal, and a second gate which receives the inverted early pre-charge signal and the AND output signal and outputs an effective pre-charge signal.
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STATIC STORES
title Ternary content addressable memory (TCAM) for multi bit miss detect circuit
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