Semiconductive device and associated method of manufacture
A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconducti...
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creator | Behtash Reza Boettcher Tim Zhu Linpei Igel-Holtzendorff Thomas |
description | A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9911816B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9911816B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9911816B23</originalsourceid><addsrcrecordid>eNqNyjEOwjAMBdAsDAi4gy_AEJAQZQS1Yi_MlWX_iEgkqYjT87NwAKa3vLW7jEhRStYmFheQYokC4qzEtRaJbFBKsFdRKoES5xZYrH2wdavA74rdz42joX_c7nvMZUKdWZBh03PsOu_P_nQ9HP8oX0iMLy8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductive device and associated method of manufacture</title><source>esp@cenet</source><creator>Behtash Reza ; Boettcher Tim ; Zhu Linpei ; Igel-Holtzendorff Thomas</creator><creatorcontrib>Behtash Reza ; Boettcher Tim ; Zhu Linpei ; Igel-Holtzendorff Thomas</creatorcontrib><description>A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180306&DB=EPODOC&CC=US&NR=9911816B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76295</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180306&DB=EPODOC&CC=US&NR=9911816B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Behtash Reza</creatorcontrib><creatorcontrib>Boettcher Tim</creatorcontrib><creatorcontrib>Zhu Linpei</creatorcontrib><creatorcontrib>Igel-Holtzendorff Thomas</creatorcontrib><title>Semiconductive device and associated method of manufacture</title><description>A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAMBdAsDAi4gy_AEJAQZQS1Yi_MlWX_iEgkqYjT87NwAKa3vLW7jEhRStYmFheQYokC4qzEtRaJbFBKsFdRKoES5xZYrH2wdavA74rdz42joX_c7nvMZUKdWZBh03PsOu_P_nQ9HP8oX0iMLy8</recordid><startdate>20180306</startdate><enddate>20180306</enddate><creator>Behtash Reza</creator><creator>Boettcher Tim</creator><creator>Zhu Linpei</creator><creator>Igel-Holtzendorff Thomas</creator><scope>EVB</scope></search><sort><creationdate>20180306</creationdate><title>Semiconductive device and associated method of manufacture</title><author>Behtash Reza ; Boettcher Tim ; Zhu Linpei ; Igel-Holtzendorff Thomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9911816B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Behtash Reza</creatorcontrib><creatorcontrib>Boettcher Tim</creatorcontrib><creatorcontrib>Zhu Linpei</creatorcontrib><creatorcontrib>Igel-Holtzendorff Thomas</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Behtash Reza</au><au>Boettcher Tim</au><au>Zhu Linpei</au><au>Igel-Holtzendorff Thomas</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductive device and associated method of manufacture</title><date>2018-03-06</date><risdate>2018</risdate><abstract>A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductive device and associated method of manufacture |
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