Insulated gate bipolar transistor with improved on/off resistance

Insulated gate bipolar transistor with improved on/off resistance

In a plane view of the front surface of the semiconductor substrate, the source region and the first contact region are arranged adjacent to each other in a direction along the gate trench in an area being in contact with a side surface of the gate trench, and the second contact region is arranged a...

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Hauptverfasser: Miyahara Shinichiro, Watanabe Yukihiko, Sugimoto Masahiro
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Miyahara Shinichiro
Watanabe Yukihiko
Sugimoto Masahiro
description In a plane view of the front surface of the semiconductor substrate, the source region and the first contact region are arranged adjacent to each other in a direction along the gate trench in an area being in contact with a side surface of the gate trench, and the second contact region is arranged adjacent to the source region and the first contact region in an area apart from the gate trench. The impurity concentration of the first contact region is lower than the impurity concentration of the second contact region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Insulated gate bipolar transistor with improved on/off resistance
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