Isolation structures for semiconductor devices including trenches containing conductive material

An isolation structure formed in a semiconductor substrate of a first conductivity type includes a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate. A first trench extends downward from a surface of the substrate and overlaps ont...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Disney Donald Ray, Williams Richard K, Chan Wai Tien
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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