Semiconductor device
A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is...
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| creator | Isobe Atsuo Yamazaki Shunpei Hondo Suguru Hata Yuki |
| description | A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9899533B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9899533B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9899533B23</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYWlpamxsZORsZEKAEAKK4g2A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>Isobe Atsuo ; Yamazaki Shunpei ; Hondo Suguru ; Hata Yuki</creator><creatorcontrib>Isobe Atsuo ; Yamazaki Shunpei ; Hondo Suguru ; Hata Yuki</creatorcontrib><description>A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180220&DB=EPODOC&CC=US&NR=9899533B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180220&DB=EPODOC&CC=US&NR=9899533B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Isobe Atsuo</creatorcontrib><creatorcontrib>Yamazaki Shunpei</creatorcontrib><creatorcontrib>Hondo Suguru</creatorcontrib><creatorcontrib>Hata Yuki</creatorcontrib><title>Semiconductor device</title><description>A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwZYWlpamxsZORsZEKAEAKK4g2A</recordid><startdate>20180220</startdate><enddate>20180220</enddate><creator>Isobe Atsuo</creator><creator>Yamazaki Shunpei</creator><creator>Hondo Suguru</creator><creator>Hata Yuki</creator><scope>EVB</scope></search><sort><creationdate>20180220</creationdate><title>Semiconductor device</title><author>Isobe Atsuo ; Yamazaki Shunpei ; Hondo Suguru ; Hata Yuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9899533B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Isobe Atsuo</creatorcontrib><creatorcontrib>Yamazaki Shunpei</creatorcontrib><creatorcontrib>Hondo Suguru</creatorcontrib><creatorcontrib>Hata Yuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Isobe Atsuo</au><au>Yamazaki Shunpei</au><au>Hondo Suguru</au><au>Hata Yuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2018-02-20</date><risdate>2018</risdate><abstract>A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device |
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