Structures with contact trenches and isolation trenches

Structures that include contact trenches and isolation trenches, as well as methods for forming structures including contact trenches and isolation trenches. A contact trench is formed that extends through a device layer of a silicon-on-insulator (SOI) substrate to a buried oxide layer of the SOI su...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Feilchenfeld Natalie B, Zierak Michael J, Levy Max G, Lawrence BethAnn
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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