Self-latch sense timing in a one-time-programmable memory architecture

A programmable memory including a self-latching read data path. A sense amplifier senses the voltage level at a bit line, the bit line communicating the data state of a selected memory cell in its associated column. A data latch coupled to the output of the sense amplifier passes the sensed data sta...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Davis Harold L, Toops David J, Qiu Yunchen
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!