Resistive memory device, resistive memory system, and method of operating the resistive memory system

A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory ce...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Son Hong-Rak, Kong Jun Jin, Yoo Young-Geon, Shin Han-Shin, Oh Eun Chu
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Son Hong-Rak
Kong Jun Jin
Yoo Young-Geon
Shin Han-Shin
Oh Eun Chu
description A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9881671B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9881671B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9881671B23</originalsourceid><addsrcrecordid>eNrjZEgNSi3OLC7JLEtVyE3NzS-qVEhJLctMTtVRKEKXKK4sLknN1VFIzEsBCpVk5Kco5Kcp5BekFiWWZOalK5RkpOLSxMPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4kODLS0sDM3MDZ2MjIlQAgAHaj-4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Resistive memory device, resistive memory system, and method of operating the resistive memory system</title><source>esp@cenet</source><creator>Son Hong-Rak ; Kong Jun Jin ; Yoo Young-Geon ; Shin Han-Shin ; Oh Eun Chu</creator><creatorcontrib>Son Hong-Rak ; Kong Jun Jin ; Yoo Young-Geon ; Shin Han-Shin ; Oh Eun Chu</creatorcontrib><description>A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180130&amp;DB=EPODOC&amp;CC=US&amp;NR=9881671B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180130&amp;DB=EPODOC&amp;CC=US&amp;NR=9881671B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Son Hong-Rak</creatorcontrib><creatorcontrib>Kong Jun Jin</creatorcontrib><creatorcontrib>Yoo Young-Geon</creatorcontrib><creatorcontrib>Shin Han-Shin</creatorcontrib><creatorcontrib>Oh Eun Chu</creatorcontrib><title>Resistive memory device, resistive memory system, and method of operating the resistive memory system</title><description>A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgNSi3OLC7JLEtVyE3NzS-qVEhJLctMTtVRKEKXKK4sLknN1VFIzEsBCpVk5Kco5Kcp5BekFiWWZOalK5RkpOLSxMPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4kODLS0sDM3MDZ2MjIlQAgAHaj-4</recordid><startdate>20180130</startdate><enddate>20180130</enddate><creator>Son Hong-Rak</creator><creator>Kong Jun Jin</creator><creator>Yoo Young-Geon</creator><creator>Shin Han-Shin</creator><creator>Oh Eun Chu</creator><scope>EVB</scope></search><sort><creationdate>20180130</creationdate><title>Resistive memory device, resistive memory system, and method of operating the resistive memory system</title><author>Son Hong-Rak ; Kong Jun Jin ; Yoo Young-Geon ; Shin Han-Shin ; Oh Eun Chu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9881671B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Son Hong-Rak</creatorcontrib><creatorcontrib>Kong Jun Jin</creatorcontrib><creatorcontrib>Yoo Young-Geon</creatorcontrib><creatorcontrib>Shin Han-Shin</creatorcontrib><creatorcontrib>Oh Eun Chu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Son Hong-Rak</au><au>Kong Jun Jin</au><au>Yoo Young-Geon</au><au>Shin Han-Shin</au><au>Oh Eun Chu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Resistive memory device, resistive memory system, and method of operating the resistive memory system</title><date>2018-01-30</date><risdate>2018</risdate><abstract>A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9881671B2
source esp@cenet
subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Resistive memory device, resistive memory system, and method of operating the resistive memory system
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T05%3A16%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Son%20Hong-Rak&rft.date=2018-01-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9881671B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true