Resistive memory device, resistive memory system, and method of operating the resistive memory system
A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory ce...
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creator | Son Hong-Rak Kong Jun Jin Yoo Young-Geon Shin Han-Shin Oh Eun Chu |
description | A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state. |
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The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180130&DB=EPODOC&CC=US&NR=9881671B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180130&DB=EPODOC&CC=US&NR=9881671B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Son Hong-Rak</creatorcontrib><creatorcontrib>Kong Jun Jin</creatorcontrib><creatorcontrib>Yoo Young-Geon</creatorcontrib><creatorcontrib>Shin Han-Shin</creatorcontrib><creatorcontrib>Oh Eun Chu</creatorcontrib><title>Resistive memory device, resistive memory system, and method of operating the resistive memory system</title><description>A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. 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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | Resistive memory device, resistive memory system, and method of operating the resistive memory system |
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