Magnetic memory device and operating method thereof

A magnetic memory device may include a bit line, a plurality of source lines, a plurality of normal cells coupled between the bit line and the plurality of source lines, and each including a magnetic resistance element and a switching element coupled in series to the magnetic resistance element and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hong Jongil, Yoon Hongil, Jo Kangwook
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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